Cypress Semiconductor CY7C1024DV33 Manual de usuario

Cypress Semiconductor Corporation • 198 Champion Court • San Jose

CA 95134-1709 • 408-943-2600

Document Number: 001-08353 Rev. *C Revised November 6, 2008

CY7C1024DV33

3-Mbit (128K X 24) Static RAM

Features

■

High speed

❐

= 10 ns

■

Low active power

❐

= 175 mA at 10 ns

■

Low CMOS standby power

❐

SB2

= 25 mA

■

Operating voltages of 3.3 ± 0.3V

■

2.0V data retention

■

Automatic power down when deselected

■

TTL compatible inputs and outputs

■

Easy memory expansion with CE

, CE

, and CE

features

■

Available in Pb-free standard 119-ball PBGA

Functional Description

The CY7C1024DV33 is a high performance CMOS static RAM

organized as 128K words by 24 bits. This device has an

automatic power down feature that significantly reduces power

consumption when deselected.

To write to the device, enable the chip (CE

LOW, CE

HIGH,

and CE

LOW), while forcing the Write Enable (WE) input LOW.

Toreadfromthedevice,enablethechipbytakingCE

LOW,CE

HIGH, and CE

LOW while forcing the Output Enable (OE) LOW

and the Write Enable (WE) HIGH. See the Truth Table on page

7 for a complete description of Read and Write modes.

The 24 I/O pins (I/O

to I/O

) are placed in a high impedance

state when the device is deselected (CE

HIGH, CE

LOW, or

HIGH) or when the output enable (OE) is HIGH during a

write operation. (CE

LOW, CE

HIGH, CE

LOW, and WE

LOW).

Logic Block Diagram

COLUMN

DECODER

ROW DECODER

SENSE AMPS

INPUT BUFFER

128K x 24

ARRAY

I/O

– I/O

, CE

CONTROL LOGIC

(9:0)

(16:10)

[+] Feedback[+] Feedback

CY7C1024DV33

Document Number: 001-08353 Rev. *C Page 2 of 9

Selection Guide

Description –10 Unit

Maximum Access Time 10 ns

Maximum Operating Current 175 mA

Maximum CMOS Standby Current 25 mA

Pin Configuration

Figure 1. 119-Ball PBGA Top View

[1]

1234567

ANCAAAAANC

BNC A A CE

AANC

CI/O

NC CE

NC I/O

DI/O

I/O

EI/O

I/O

FI/O

I/O

GI/O

I/O

HI/O

I/O

JNC V

KI/O

I/O

LI/O

I/O

MI/O

I/O

NI/O

I/O

PI/O

I/O

RI/O

NC NC NC NC NC I/O

TNC A A WE AANC

UNC A A OE AANC

Note

1. NC pins are not connected on the die.

[+] Feedback[+] Feedback

CY7C1024DV33

Document Number: 001-08353 Rev. *C Page 3 of 9

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage Temperature ................................. –65°C to +150°C

Ambient Temperature with

Power Applied ............................................ –55°C to +125°C

Supply Voltage on V

Relative to GND

[2]

....–0.5V to +4.6V

DC Voltage Applied to Outputs

in High Z State

[2]

...................................–0.5V to V

+ 0.5V

DC Input Voltage

[2]

...............................–0.5V to V

+ 0.5V

Current into Outputs (LOW) ........................................20 mA

Static Discharge Voltage............................................>2001V

(MIL-STD-883, Method 3015)

Latch Up Current.....................................................>200 mA

Operating Range

Range Ambient

Temperature V

Industrial –40°C to +85°C3.3V±0.3V

DC Electrical Characteristics

Over the Operating Range

Parameter Description Test Conditions

[3]

–10 Unit

Min Max

Output HIGH Voltage V

= Min, I

= –4.0 mA 2.4 V

Output LOW Voltage V

= Min, I

= 8.0 mA 0.4 V

Input HIGH Voltage 2.0 V

+ 0.3 V

IL[2]

Input LOW Voltage –0.3 0.8 V

Input Leakage Current GND < V

< V

–1 +1 μA

Output Leakage Current GND < V

OUT

, output disabled –1 +1 μA

Operating Supply

Current V

= Max, f = f

MAX

= 1/t

OUT

= 0 mA CMOS levels 175 mA

SB1

Automatic CE Power Down

Current —TTL Inputs Max V

, CE > V

> V

or V

< V

, f = f

MAX

30 mA

SB2

Automatic CE Power Down

Current — CMOS Inputs Max V

, CE > V

– 0.3V,

> V

– 0.3V, or V

< 0.3V, f = 0 25 mA

Capacitance

Tested initially and after any design or process changes that may affect these parameters.

Parameter Description Test Conditions Max Unit

Input Capacitance T

= 25°C, f = 1 MHz, V

= 3.3V 8 pF

OUT

I/O Capacitance 10 pF

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.

Parameter Description Test Conditions 119-Ball

PBGA Unit

Thermal Resistance

(Junction to Ambient) Still air, soldered on a 3 × 4.5 inch,

four layer printed circuit board 20.31 °C/W

Thermal Resistance

(Junction to Case) 8.35 °C/W

Notes

2. V

(min) = –2.0V andV

(max) = V

+ 2V for pulse durations of less than 20 ns.

3. CErefers toacombinationofCE

,CE

,and CE

.CEis LOWwhenCE

,CE

areLOWandCE

is HIGH. CE isHIGHwhen CE

isHIGH, or CE

is LOW, or CE

isHIGH.

[+] Feedback[+] Feedback

CY7C1024DV33

Document Number: 001-08353 Rev. *C Page 4 of 9

Figure 2. AC Test Loads and Waveform

[4]

AC Switching Characteristics

Over the Operating Range

[5]

Parameter Description –10 Unit

Min Max

Read Cycle

power[6]

(Typical) to the First Access 100 μs

Read Cycle Time 10 ns

Address to Data Valid 10 ns

OHA

Data Hold from Address Change 3 ns

ACE

Active LOW to Data Valid

[3]

10 ns

DOE

OE LOW to Data Valid 5 ns

LZOE

OE LOW to Low Z

[7]

1ns

HZOE

OE HIGH to High Z

[7]

5ns

LZCE

Active LOW to Low Z

[3, 7]

3ns

HZCE

CE Deselect

HIGH to High Z

[3, 7]

5ns

Active LOW to Power Up

[3, 8]

0ns

CE Deselect

HIGH to Power Down

[3, 8]

10 ns

90%

10%

3.0V

GND

90%

10%

All input pulses

3.3V

OUTPUT 5 pF*

(a) (b)

R1 317 Ω

351Ω

Fall Time:> 1V/ns

(c)

OUTPUT 50Ω

Z0= 50Ω

= 1.5V

30 pF*

*Capacitive Load consists of all

components of the test environment

Rise Time > 1V/ns

Including jig

and scope

Notes

4. Valid SRAM operation does not occur until the power supplies have reached the minimum operating V

(3.0V). 100 μs (t

power

) after reaching the minimum operating

, normal SRAM operation can begin including reduction in V

to the data retention (V

CCDR

, 2.0V) voltage.

5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, and input pulse levels of 0 to 3.0V. Test conditions for the read cycle use

output loading as shown in part a) of Figure 2, unless specified otherwise.

6. t

POWER

gives the minimum amount of time that the power supply is at typical V

values until the first memory access is performed.

7. t

HZOE

, t

HZCE

, t

HZWE

, t

LZOE

, t

LZCE

, and t

LZWE

are specified with a load capacitance of 5 pF as in part (b) of Figure 2. Transition is measured ±200 mV from steady state

voltage.

8. These parameters are guaranteed by design and are not tested.

[+] Feedback[+] Feedback

CY7C1024DV33

Document Number: 001-08353 Rev. *C Page 5 of 9

Write Cycle

[9, 10]

Write Cycle Time 10 ns

SCE

active LOW to Write End

[3]

7ns

Address Setup to Write End 7 ns

Address Hold from Write End 0 ns

Address Setup to Write Start 0 ns

PWE

WE Pulse Width 7 ns

Data Setup to Write End 5.5 ns

Data Hold from Write End 0 ns

LZWE

WE HIGH to Low Z

[7]

3ns

HZWE

WE LOW to High Z

[7]

5ns

Data Retention Characteristics

Over the Operating Range

Parameter Description Conditions

[3]

Min Typ Max Unit

for Data Retention 2 V

CCDR

Data Retention Current V

= 2V, CE > V

– 0.2V,

> V

– 0.2V or V

< 0.2V 25 mA

CDR [11]

Chip Deselect to Data Retention Time 0 ns

R [12]

Operation Recovery Time t

Data Retention Waveform

AC Switching Characteristics

(continued)

Over the Operating Range

[5]

Parameter Description –10 Unit

Min Max

3.0V3.0V

CDR

DATA RETENTION MODE

Notes

9. The internal write time of the memory is defined by the overlap of CE

and CE

LOW and WE LOW. Chip enables must be active and WE must be LOW to

initiate a write. The transition of any of these signals terminate the write. The input data setup and hold timing is referenced to the leading edge of the signal that

terminates the write.

10.The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of t

HZWE

and t

11. Tested initially and after any design or process changes that may affect these parameters.

12.Full device operation requires linear V

ramp from V

to V

CC(min)

> 50 μs or stable at V

CC(min)

> 50 μs.

[+] Feedback[+] Feedback

CY7C1024DV33

Document Number: 001-08353 Rev. *C Page 6 of 9

Switching Waveforms

Figure 3. Read Cycle No. 1 (Address Transition Controlled)

[13, 14]

Figure 4. Read Cycle No. 2 (OE Controlled)

[3, 14, 15]

Figure 5. Write Cycle No. 1 (CE Controlled)

[3, 16, 17]

PREVIOUS DATA VALID DATA VALID

OHA

ADDRESS

DATA OUT

50%

DATA VALID

ACE

DOE

LZOE

LZCE

HIGH IMPEDANCE

HZOE

HZCE

HIGH

ICC

ISB

IMPEDANCE

ADDRESS

DATA OUT

SUPPLY

CURRENT

DATA VALID

PWE

SCE

DATA I/O

ADDRESS

Notes

13.Device is continuously selected. OE, CE = V

14.WE is HIGH for read cycle.

15.Address valid before or similar to CE transition LOW.

16.Data I/O is high impedance if OE = V

17.If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.

[+] Feedback[+] Feedback

CY7C1024DV33

Document Number: 001-08353 Rev. *C Page 7 of 9

Figure 6. Write Cycle No. 2 (WE Controlled, OE HIGH During Write)

[3, 16, 17]

Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW)

[3, 17]

Truth Table

OE WE I/O

– I/O

Mode Power

HXXXXHighZ PowerDown Standby(I

)

X L X X X High Z Power Down Standby (I

)

X X H X X High Z Power Down Standby (I

)

L H L L H Full Data Out Read Active (I

)

L H L X L Full Data In Write Active (I

)

L H L H H High Z Selected, Outputs Disabled Active (I

)

Switching Waveforms (continued)

PWE

SCE

HZOE

DATA

VALID

NOTE

ADDRESS

DATA I/O

DATA VALID

LZWE

PWE

SCE

HZWE

NOTE

ADDRESS

DATA I/O

Note

18.During this period, the I/Os are in the output state and input signals are not applied.

[+] Feedback[+] Feedback

CY7C1024DV33

Document Number: 001-08353 Rev. *C Page 8 of 9

Ordering Information

Speed

(ns) Ordering Code Package

Name Package Type Operating

Range

10 CY7C1024DV33-10BGXI 51-85115 119-Ball Plastic Ball Grid Array (14 x 22 x 2.4 mm) (Pb-Free) Industrial

Package Diagram

Figure 8. 119-Ball PBGA (14 x 22 x 2.4 mm)

51-85115-*B

[+] Feedback[+] Feedback

CY7C1024DV33

of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used

for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use

as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support

systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),

United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,

and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction witha Cypress

integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without

the express written permission of Cypress.

Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES

OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not

assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where

a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer

assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Use may be limited by and subject to the applicable Cypress software license agreement.

Document Number: 001-08353 Rev. *C Revised November 6, 2008 Page 9 of 9

All product and company names mentioned in this document are the trademarks of their respective holders

Document History Page

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Document Title: CY7C1024DV33, 3-Mbit (128K X 24) Static RAM

Document Number: 001-08353

Rev. ECN No. Orig. of

Change Submission

Date Description of Change

** 469517 NXR See ECN New data sheet

*A 499604 NXR See ECN Added note 1 for NC pins

Changed I

specification from 150 mA to 185 mA

Updated Test Condition for I

in DC Electrical Characteristics table

Added note for t

ACE

, t

LZCE

, t

HZCE

, t

SCE

in AC Switching Characteristics Table

on page 4

*B 1462586 VKN/SFV See ECN Converted from preliminary to final

Updated block diagram

Changed I

specification from 185 mA to 225 mA

Updated thermal specs

*C 2604677 VKN/PYRS 11/12/08 Removed Commercial operating range, Added Industrial operating range

Removed 8 ns speed bin, Added 10 ns speed bin

[+] Feedback[+] Feedback

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