Cypress Semiconductor CY62148EV30 Manual de usuario

MoBL®CY62148EV30

4-Mbit (512K x 8) Static RAM

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document #: 38-05576 Rev. *G Revised August 4, 2008

Features

■Very high speed: 45 ns

❐Wide voltage range: 2.20V to 3.60V

■Temperature ranges

❐Industrial: –40°C to +85°C

❐Automotive-A: –40°C to +85°C

■Pin compatible with CY62148DV30

■Ultra low standby power

❐Typical standby current: 1 μA

❐Maximum standby current: 7 μA (Industrial)

■Ultra low active power

❐Typical active current: 2 mA at f = 1 MHz

■Easy memory expansion with CE, and OE features

■Automatic power down when deselected

■CMOS for optimum speed and power

■Available in Pb-free 36-ball VFBGA, 32-pin TSOP II and 32-pin

SOIC [1] packages

Functional Description

The CY62148EV30[2] is a high performance CMOS static RAM

organized as 512K words by 8 bits. This device features

advanced circuit design to provide ultra low active current. This

is ideal for providing More Battery Life™ (MoBL®) in portable

applications such as cellular telephones. The device also has an

automatic power down feature that significantly reduces power

consumption. Placing the device into standby mode reduces

power consumption by more than 99 percent when deselected

(CE HIGH). The eight input and output pins (IO0through IO7) are

placed in a high impedance state when the device is deselected

(CE HIGH), the outputs are disabled (OE HIGH), or during a write

operation (CE LOW and WE LOW).

To write to the device, take Chip Enable (CE) and Write Enable

(WE) inputs LOW. Data on the eight IO pins (IO0through IO7) is

then written into the location specified on the address pins (A0

through A18).

To read from the device, take Chip Enable (CE) and Output

Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under

these conditions, the contents of the memory location specified

by the address pins appear on the IO pins.

Notes

1. SOIC package is available only in 55 ns speed bin.

2. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.

Logic Block Diagram

A0IO0

IO7

IO1

IO2

IO3

IO4

IO5

IO6

SENSE AMPS

POWER

DOWN

A13

A14

A15

A16

A17

ROW DECODER

COLUMN DECODER

512K x 8

ARRAY

INPUT BUFFER

A10

A11

A12

A18

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MoBL®CY62148EV30

Document #: 38-05576 Rev. *G Page 2 of 12

Pin Configuration [1, 3]

Product Portfolio

Product Range VCC Range (V) Speed

(ns)

Power Dissipation

Operating ICC (mA) Standby ISB2

(µA)

f = 1 MHz f = fmax

Min Typ[4] Max Typ[4] Max Typ[4] Max Typ[4] Max

CY62148EV30LL VFBGA Ind’l 2.2 3.0 3.6 45 2 2.5 15 20 1 7

TSOP II Ind’l/Auto-A

SOIC Ind’l 2.2 3.0 3.6 55 2 2.5 15 20 1 7

A12

WE A

IO4

IO5

IO6

IO7

A11

A10

IO0

IO1

IO 2

IO 3

A17

A16

36-Ball VFBGA Pinout

Top View

32-Pin SOIC/TSOP II Pinout

Top View

VSS

VCC

Notes

3. NC pins are not connected on the die.

4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA= 25°C.

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MoBL®CY62148EV30

Document #: 38-05576 Rev. *G Page 3 of 12

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage Temperature .................................. –65°C to +150°C

Ambient Temperature with

Power Applied .............................................. 55°C to +125°C

Supply Voltage to Ground

Potential..........................................–0.3V to VCC(max) + 0.3V

DC Voltage Applied to Outputs

in High-Z State [5, 6] ........................–0.3V to VCC(max) + 0.3V

DC Input Voltage [5, 6] .....................–0.3V to VCC(max) + 0.3V

Output Current into Outputs (LOW)............................. 20 mA

Static Discharge Voltage.......................................... > 2001V

(MIL-STD-883, Method 3015)

Latch up Current.....................................................> 200 mA

Operating Range

Product Range Ambient

Temperature VCC [7]

CY62148EV30 Ind’l/Auto-A –40°C to +85°C 2.2V to 3.6V

Electrical Characteristics (Over the Operating Range)

Parameter Description Test Conditions - 45 (Ind’l/Auto-A) - 55 [1]

Unit

Min Typ[4] Max Min Typ[4] Max

VOH Output HIGH

Voltage

IOH = –0.1 mA 2.0 2.0 V

IOH = –1.0 mA, VCC >2.70V 2.4 2.4 V

VOL Output LOW

Voltage

IOL = 0.1 mA 0.4 0.2 V

IOL = 2.1 mA, VCC >2.70V 0.4 0.4 V

VIH Input HIGH

Voltage

VCC = 2.2V to 2.7V 1.8 VCC + 0.3V 1.8 VCC + 0.3V V

VCC= 2.7V to 3.6V 2.2 VCC + 0.3V 2.2 VCC + 0.3V V

VIL Input LOW

Voltage

VCC = 2.2V to 2.7V For VFBGA and

TSOP II package

–0.3 0.6 V

For SOIC package –0.3 0.4 [8] V

VCC = 2.7V to 3.6V For VFBGA and

TSOP II package

–0.3 0.8 V

For SOIC package –0.3 0.6 [8]

IIX Input Leakage

Current

GND < VI< VCC –1 +1 –1 +1 μA

IOZ Output Leakage

Current

GND < VO <VCC, Output Disabled –1 +1 –1 +1 μA

ICC VCC Operating

Supply Current

f = fmax = 1/tRC VCC = VCC(max),

IOUT = 0 mA,

CMOS levels

15 20 15 20 mA

f = 1 MHz 2 2.5 2 2.5

ISB1 Automatic CE

Power Down

Current — CMOS

Inputs

CE > VCC – 0.2V,

VIN >VCC – 0.2V, VIN < 0.2V

f = fmax (Address and Data Only),

f = 0 (OE and WE), VCC = 3.60V

17 17μA

ISB2 [9] Automatic CE

Power Down

Current — CMOS

Inputs

CE > VCC – 0.2V,

VIN > VCC – 0.2V or VIN < 0.2V,

f = 0, VCC = 3.60V

17 17μA

Notes

5. VIL(min) = –2.0V for pulse durations less than 20 ns.

6. VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

7. Full device AC operation assumes a minimum of 100 μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.

8. Under DC conditions the device meets a VIL of 0.8V (for VCC range of 2.7V to 3.6V) and 0.6V (for VCC range of 2.2V to 2.7V). However, in dynamic conditions

Input LOW voltage applied to the device must not be higher than 0.6V and 0.4V for the above ranges. This is applicable to SOIC package only. Please refer to

AN13470 for details.

9. Only chip enable (CE) must be HIGH at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

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MoBL®CY62148EV30

Document #: 38-05576 Rev. *G Page 4 of 12

Capacitance (For All packages) [10]

Parameter Description Test Conditions Max Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz,

VCC = VCC(typ)

10 pF

COUT Output Capacitance 10 pF

Thermal Resistance [10]

Parameter Description Test Conditions VFBGA

Package

TSOP II

Package

SOIC

Package Unit

ΘJA Thermal Resistance

(Junction to Ambient)

Still Air, soldered on a 3 x 4.5 inch,

two-layer printed circuit board

72 75.13 55 °C/W

ΘJC Thermal Resistance

(Junction to Case)

8.86 8.95 22 °C/W

AC Test Loads and Waveforms

Parameters 2.50V 3.0V Unit

R1 16667 1103 Ω

R2 15385 1554 Ω

RTH 8000 645 Ω

VTH 1.20 1.75 V

Data Retention Characteristics (Over the Operating Range)

Parameter Description Conditions Min Typ [4] Max Unit

VDR VCC for Data Retention 1.5 V

ICCDR [9] Data Retention Current VCC = 1.5V, CE > VCC – 0.2V,

VIN >VCC – 0.2V or VIN <

0.2V

Ind’l/Auto-A 0.8 7 μA

tCDR [10] Chip Deselect to Data Retention Time 0 ns

tR [11] Operation Recovery Time tRC ns

Data Retention Waveform

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

GND

90%

10%

90%

10%

Rise Time = 1 V/ns Fall Time = 1 V/ns

OUTPUT V

Equivalent to: THEVENIN EQUIVALENT

ALL INPUT PULSES

RTH

VCC(min)

tCDR

VDR >1.5V

DATA RETENTION MODE

VCC

Notes

10. Tested initially and after any design or process changes that may affect these parameters.

11. Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) > 100 μs.

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MoBL®CY62148EV30

Document #: 38-05576 Rev. *G Page 5 of 12

Switching Characteristics

(Over the Operating Range) [12]

Parameter Description - 45 (Ind’l/Auto-A) - 55 [1]

Unit

Min Max Min Max

Read Cycle

tRC Read Cycle Time 45 55 ns

tAA Address to Data Valid 45 55 ns

tOHA Data Hold from Address Change 10 10 ns

tACE CE LOW to Data Valid 45 55 ns

tDOE OE LOW to Data Valid 22 25 ns

tLZOE OE LOW to Low Z [13] 55ns

tHZOE OE HIGH to High Z [13, 14] 18 20 ns

tLZCE CE LOW to Low Z [13] 10 10 ns

tHZCE CE HIGH to High Z [13, 14] 18 20 ns

tPU CE LOW to Power Up 0 0 ns

tPD CE HIGH to Power Up 45 55 ns

Write Cycle [15]

tWC Write Cycle Time 45 55 ns

tSCE CE LOW to Write End 35 40 ns

tAW Address Setup to Write End 35 40 ns

tHA Address Hold from Write End 0 0 ns

tSA Address Setup to Write Start 0 0 ns

tPWE WE Pulse Width 35 40 ns

tSD Data Setup to Write End 25 25 ns

tHD Data Hold from Write End 0 0 ns

tHZWE WE LOW to High Z [13, 14] 18 20 ns

tLZWE WE HIGH to Low Z [13] 10 10 ns

Notes

12. Test Conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of VCC(typ)/2, input

pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” on page 4.

13. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

14. tHZOE, tHZCE, and tHZWE transitions are measured when the output enter a high impedance state.

15. The internal write time of the memory is defined by the overlap of WE, CE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can

terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.

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MoBL®CY62148EV30

Document #: 38-05576 Rev. *G Page 6 of 12

Switching Waveforms

Figure 1. Read Cycle No. 1 (Address Transition Controlled) [16, 17]

Figure 2. Read Cycle No. 2 (OE Controlled) [17, 18]

Figure 3. Write Cycle No. 1 (WE Controlled, OE HIGH During Write) [19, 20]

PREVIOUS DATA VALID DATA VALID

tAA

tOHA

tRC

ADDRESS

DATA OUT

50%

DATA VALID

tRC

tACE

tDOE

tLZOE

tLZCE

tPU

HIGH IMPEDANCE

tHZOE

tHZCE

tPD

IMPEDANCE

ICC

ISB

HIGH

ADDRESS

DATA OUT

VCC

SUPPLY

CURRENT

DATA VALID

tHD

tSD

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZOE

ADDRESS

DATA IO

NOTE

Notes

16. Device is continuously selected. OE, CE = VIL.

17. WE is HIGH for read cycles.

18. Address valid before or similar to CE transition LOW.

19. Data IO is high impedance if OE = VIH.

20. If CE goes HIGH simultaneously with WE HIGH, the output remains in high impedance state.

21. During this period, the IOs are in output state. Do not apply input signals.

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MoBL®CY62148EV30

Document #: 38-05576 Rev. *G Page 7 of 12

Figure 4. Write Cycle No. 2 (CE Controlled) [19, 20]

Figure 5. Write Cycle No. 3 (WE Controlled, OE LOW) [20]

Truth Table

CE WE OE Inputs/Outputs Mode Power

H X X High Z Deselect/Power down Standby (ISB)

L H L Data Out Read Active (ICC)

L H H High Z Output Disabled Active (ICC)

L L X Data in Write Active (ICC)

Switching Waveforms (continued)

tWC

DATA VALID

tAW

tSA

tPWE

tHA

tHD

tSD

tSCE

ADDRESS

DATA IO

DATA VALID

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

ADDRESS

DATA IO

NOTE

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MoBL®CY62148EV30

Document #: 38-05576 Rev. *G Page 8 of 12

Ordering Information

Speed

(ns) Ordering Code Package

Diagram Package Type Operating

Range

45 CY62148EV30LL-45BVXI 51-85149 36-ball Very Fine Pitch Ball Grid Array (Pb-free) Industrial

CY62148EV30LL-45ZSXI 51-85095 32-pin Thin Small Outline Package II (Pb-free)

CY62148EV30LL-45ZSXA 51-85095 32-pin Thin Small Outline Package II (Pb-free) Automotive-A

55 CY62148EV30LL-55SXI 51-85081 32-pin Small Outline Integrated Circuit (Pb-free) Industrial

Contact your local Cypress sales representative for availability of these parts.

Package Diagrams

Figure 6. 36-ball VFBGA (6 x 8 x 1 mm) (51-85149)

A1 CORNER

0.75

Ø0.30±0.05(36X)

Ø0.25 M C A B

Ø0.05 M C

0.15(4X)

0.21±0.05

1.00 MAX

SEATING PLANE

0.55 MAX.

0.25 C

0.10 C

A1 CORNER

TOP VIEW BOTTOM VIEW

234

3.75

5.25

465231

6.00±0.10

8.00±0.10

6.00±0.10

1.875

2.625

0.26 MAX.

51-85149-*C

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MoBL®CY62148EV30

Document #: 38-05576 Rev. *G Page 9 of 12

Figure 7. 32-pin TSOP II (51-85095)

Package Diagrams (continued)

51-85095-**

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MoBL®CY62148EV30

Document #: 38-05576 Rev. *G Page 10 of 12

Figure 8. 32-pin (450 MIL) Molded SOIC (51-85081)

Package Diagrams (continued)

0.546[13.868]

0.440[11.176]

0.101[2.565]

0.050[1.270]

0.014[0.355]

0.118[2.997]

0.004[0.102]

0.047[1.193]

0.006[0.152]

0.023[0.584]

0.793[20.142]

0.450[11.430]

0.566[14.376]

0.111[2.819]

0.817[20.751]

BSC.

0.020[0.508]

MIN.

MAX.

0.012[0.304]

0.039[0.990]

0.063[1.600]

SEATING PLANE

116

17 32

0.004[0.102]

51-85081-*B

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