Panasonic Schottky Barrier Diodes MA2SD30 Manual de usuario

Schottky Barrier Diodes (SBD)

Publication date: October 2003 SKH00130AED

MA2SD30

Silicon epitaxial planar type

For super high speed switching

■Features

•Small reverse current: IR< 2 µA (at VR=30 V)

•Optimum for high frequency rectification because of its short

reverse recovery time trr .

■Absolute Maximum Ratings Ta=25°C

Parameter Symbol Rating Unit

Reverse voltage VR30 V

Repetitive peak reverse voltage VRRM 30 V

Forward current (Average) IF(AV) 100 mA

Peak forward current IFM 200 mA

Non-repetitive peak forward IFSM 1A

surge current *

Junction temperature Tj125 °C

Storage temperature Tstg −55 to +125 °C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current IR1 VR=10 V 0.3 µA

IR2 VR=30 V 2

Forward voltage VF1 IF=10 mA 0.38 0.44 V

VF2 IF=100 mA 0.51 0.58

Terminal capacitance CtVR=0 V, f =1 MHz 9 pF

Reverse recovery time *trr IF=IR=100 mA 1 ns

Irr =10 mA, RL=100 Ω

■Electrical Characteristics Ta=25°C ±3°C

Marking Symbol: 8N

Unit: mm

0.80+0.05

–0.03

0.60+0.05

–0.03

0.12+0.05

–0.02

1.20+0.05

–0.03

0+0

–0.05

0.30±0.05

0.01±0.01

1.60±0.05

0.01±0.01

0.80±0.05(0.80)

(0.60)

(0.15)

(0.60)

5˚

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 250 MHz

4. *: trr measurement circuit

1: Anode

2: Cathode

SSMini2-F1 Package

Note) *:

The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

90%

tp=2 µs

tr=0.35 ns

δ=0.05

IF=100 mA

IR=100 mA

RL=100 Ω

10%

Input Pulse Output Pulse

Irr =10 mA

trtp

trr

Bias Application Unit (N-50BU)

Pulse Generator

(PG-10N)

Rs=50 Ω

Wave Form

Analyzer

(SAS-8130)

Ri=50 ΩVR

This product complies with the RoHS Directive (EU 2002/95/EC).

MA2SD30

SKH00130AED

IFVFIRVRCtVR

−3

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

−2

−1

Forward voltage VF(V)

Forward current IF(mA)

=75°C

25°C

−25°C

0 5 10 252015 4030 35

−1

−2

−3

−4

Reverse voltage VR(V)

Reverse current IR(µA)

=−25°C

25°C

75°C

100

0 5 10 15 20 25 30

Reverse voltage V

(V)

Terminal capacitance C

(pF)

=25°C

This product complies with the RoHS Directive (EU 2002/95/EC).

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

–Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

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