Panasonic Transistors 2SC2480 Manual de usuario
1
Transistors
Publication date: June 2006 SJC00116CED
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■Features
•High transition frequency fT
•Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=100 µA, IE=030 V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=03V
Base-emitter voltage VBE VCB =10 V, IE=−2 mA 720 mV
Forward current transfer ratio hFE VCB =10 V, IE=−2 mA 25 250
Transition frequency *fTVCB =10 V, IE=−15 mA, f =200 MHz 800 1
300 1
600 MHz
Reverse transfer capacitance Crb VCE =6 V, IC=0, f =1 MHz 0.8 pF
(Common base)
Reverse transfer capacitance Cre VCB =10 V, IE=−1 mA, f =10.7 MHz 1.0 1.5 pF
(Common emitter)
Power gain GPVCB =10 V, IE=−1 mA, f =200 MHz 20 dB
Unit: mm
■Electrical Characteristics Ta=25°C ±3°C
1: Base
2: Emitter
3: Collector
JEITA: SC-59A
Mini3-G1 Package
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Marking Symbol: R
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank T S No-rank
fT800 to 1
400 1
000 to 1
600 800 to 1
600
Marking symbol RT RS R
Product of no-rank is not classified and have no indication for rank.
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2480
2SJC00116CED
IBVBE ICVBE hFE IC
PCTaICVCE ICIB
VCE(sat) ICfTIECre VCE
0 16040 12080
0
240
200
160
120
80
40
Ambient temperature Ta(°C)
Collector power dissipation PC(mW)
0
24
20
16
12
8
4
0481216
I
B
=300 µA
50 µA
100 µA
150 µA
200 µA
250 µA
Collector-emitter voltage VCE (V)
Collector current IC(mA)
T
a
=25°C
0
0 500400300200100
24
20
16
12
8
4
Base current IB(µA)
Collector current IC(mA)
VCE =10 V
Ta=25°C
0
400
350
300
250
200
150
100
50
0 2.01.61.20.80.4
VCE =10 V
Ta=25°C
Base-emitter voltage VBE (V)
Base current IB(µA)
0
0 2.01.61.20.80.4
60
50
40
30
20
10
VCE =10 V
Ta=75°C−25°C
25°C
Base-emitter voltage VBE (V)
Collector current IC(mA)
0
0.1
240
200
160
120
80
40
1 10 100
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
V
CE
=10 V
Collector current I
C
(mA)
0.01
0.1
0.1
1
10
100
1 10 100
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
I
C
/I
B
=10
T
a
=75°C
25°C
–25°C
−0.1 −1−10 −100
0
1 600
1 400
1 200
1 000
800
600
400
200
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
V
CB
=10 V
T
a
=25°C
0
2.4
2.0
1.6
1.2
0.8
0.4
0.1 1 10 100
Collector-emitter voltage VCE (V)
I
C
=1 mA
f =10.7 MHz
T
a
=25°C
Reverse transfer capacitance C
re
(pF)
(Common emitter)
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2480
3
SJC00116CED
Zrb IEGPIENF IE
bib gib brb grb bfb gfb
bob gob
−0.1 −1−10
Reverse transfer impedance Z
rb
(Ω)
0
120
100
80
60
40
20
V
CB
=10 V
f =2 MHz
T
a
=25°C
Emitter current IE(mA)
−0.1 −1−10 −100
Power gain G
P
(dB)
0
40
35
30
25
20
15
10
5
V
CB
=10 V
f =100 MHz
R
g
=50 Ω
T
a
=25°C
Emitter current I
E
(mA)
Noise figure NF (dB)
0
12
10
8
6
4
2
−0.1 −1−10 −100
V
CB
=10 V
f =100 MHz
R
g
=50 kΩ
T
a
=25°C
Emitter current I
E
(mA)
−60
05040302010
0
−10
−20
−30
−40
−50
Input conductance gib (mS)
Input susceptance b
ib
(mS)
y
ib
=g
ib
+jb
ib
V
CB
=10 V
f =900 MHz
I
E
=−2 mA
−5 mA
300
500
600
200
−2.4
−1.0 0−0.2−0.4−0.6−0.8
0
−0.4
−0.8
−1.2
−1.6
−2.0
f =900 MHz
I
E
=−5 mA
−2 mA
300
500
600
200
Reverse transfer conductance grb (mS)
Reverse transfer susceptance b
rb
(mS)
y
rb
=g
rb
+jb
rb
V
CB
=10 V
0
−60 40200−20−40
48
40
32
24
16
8
−2 mA
300
500
600
900
f =200 MHz
IE=−5 mA
Forward transfer conductance gfb (mS)
Forward transfer susceptance bfb (mS)
yfb =gfb +jbfb
VCB =10 V
0
0 2.01.61.20.80.4
12
10
8
6
4
2
−5 mA
300
500
600
900
f =200 MHz
IE=−2 mA
Output conductance g
ob
(mS)
Output susceptance b
ob
(mS)
yob =gob +jbob
VCE =10 V
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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