Silicon Laboratories Si8284-EVB Manual de usuario

UG168: Si8284-EVB User's Guide

This document describes the operation of the Si8284-EVB.

The Si8284 Evaluation Kit contains the following items:

• Si8284-EVB

•Si8284CD-IS installed on the evaluation board.

KEY POINTS

• Discusses hardware overview and setup,

including:

• Si8284 low voltage side connections.

•DC-DC operation.

• Si8284 isolated gate drive connections.

• Offers alternative configurations.

• Demonstrates driver functionality.

• Shows Si8284-EVB schematics and

silkscreen/copper layout.

• Includes the bill of materials and ordering

guide.

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1. Overview and Setup

1.1 Hardware

Si8284-EVB can be used to demonstrate the isolated gate drive capabilities of the installed Si8284CD-IS. The Si8284 includes a DC-

DC converter used to supply isolated power to the gate driver.

Si8284 Low Voltage Side Connections

Supply power to the input side of Si8284 by applying 12 to 24 VDC to VDDP at terminal block J1. LED D6 above terminal block J1

illuminates to show power applied. For interfacing to the low voltage side of Si8284, VDDA supply must be between 3.0 and 5.5 VDC.

Either a separate supply can be connected to VDDA terminal on J1 or 5 VDC can be derived from VDDP through the regulator circuit

and directed to VDDA through a jumper at JP4. LED D5 below terminal block J1 illuminates to show VDDA power applied.

J6-J11 single pin headers provide access to the IN+, IN-, RSTb, and SH inputs and FLTb and RDY outputs of the Si8284. These sig-

nals can be brought out to an external microcontroller using a ribbon cable (not supplied). FLTb is an open drain output and has a pull-

up resistor to VDDA. The open drain output allows multiple gate drivers FLTb outputs to share the same microcontroller input.

Driver functionality can be exercised without microcontroller by applying a GNDA referenced PWM signal from a function generator to

the IN+ and IN- inputs. Maximum input voltage is VDDA.

DC-DC Operation

The isolated DC-DC converter is set to generate (with respect to VMID) 15 V for VDDB and -9 V for VSSB. LED D8 and D7 illuminates

when VDDB and VSSB are powered respectively. DC-DC operation can be turned off by pulling terminal J11 to VDDA.

Si8284 Isolated Gate Drive Connections

There is a provision for a MOSFET or an IGBT in a TO-247 package (not supplied) at Q1.

From top to bottom, the through holes for the transistor leads are Source, Drain, and Gate. Load transistors are biased by applying

voltage across VPWR and VMID terminals of J2. This voltage should not exceed the rated VDS of the transistor or 300 V, whichever is

lower. Supply voltage constraints are summarized in the table below.

Note: Si8284 can drive the gate of either high-side or low-side MOSFET or IGBT in a bridge configuration. VMID is the same net as the

load when driving the gate of a high side MOSFET or IGBT. For a gate drive for a low side MOSFET or IGBT, VMID is the return for the

load.

Table 1.1. Supply Voltage Constraints

3.0 V ≤ VDDA – GNDA ≤ 5.5 V

12 V ≤ VDDP ≤ 24 V

VSSB ≤ VMID < VDDB

UVLO + 1 < VDDB - VSSB < 30 V

VPWR < VDS (Q)

VPWR < 300 V

|GNDA – VSSB| < 5 kV

Note:

1. UVLO+ for the Si8284CD-IS is 12.3 V.

UG168: Si8284-EVB User's Guide

Overview and Setup

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1.2 Alternative Configurations

Positive Voltage Gate Drive Only

The standard configuration for the gate driver to apply positive voltage, VDDB-VMID, to the gate during the high drive portion of the

PWM cycle and negative voltage, VSSB-VMID, during the low drive portion of the PWM cycle. Alternatively, if only positive drive voltage

is desired, remove R13 and install a 0 Ω resistor at R19.

Prototyping Area

If additional components are needed to evaluate the gate drive function for a particular load, there is a prototyping area just below Q2

locations.

1.3 Demonstrating Driver Functionality

Even with no load present, the basic functionality of the Si8284 can be demonstrated.

1. Apply 24 V to VDDP to power both sides of the Si8284. With jumpers installed at JP4–JP8, D5–D8 will illuminate indicating sup-

plies are biased.

2. Leave VPWR unpowered. Install a jumper at JP9. This disables desaturation detection and allows for normal operation of the

Si8284. Since both sides of the Si8284 have been powered on, RDY will output 5 V, which can be observed at J8.

3. Apply 5 V to both J9, IN+ and J10, IN-. VL will turn on and –9 V will be observed across pins 1 and 3 of Q1.

4. Remove 5 V from J10 and allow IN- to be pulled to GNDA. VH will turn on and +15 V will be observed across pins 1 and 3 of Q1.

5. Remove the short between VPWR and VMID at JP9.

6. With no path for DSAT current, the voltage at the DSAT pin rises and the Si8284 will drive the output low and FLTb to 0V which

can be observed at J7.

7. Once again, place the short between VPWR and VMID at JP9. Apply 0 V to RSTb input at J6. This clears the fault and normal

operation is restored.

1.4 Quick Reference Tables

Table 1.2. Test Point Descriptions

Test Point Description Referenced to:

TP1 VDDA GNDA

TP3 VPWR VMID

TP4 VDDB VMID

TP5 VMID N/A

TP6 VSSB VMID

TP7 VDDP GNDA

TPV8 IGBT_GATE VMID

TP9 GNDA N/A

TPV9 DSAT VMID

TPV10 MOSFET_D GNDA

TPV11 MOSFET_G GNDA

TPV12 CLMP VSSB

UG168: Si8284-EVB User's Guide

Overview and Setup

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2. Schematics

SF3

BUMPER

TP6

VSSB

SF4

BUMPER

Si8284

GNDA

VDDB

VMID

VSSB

VPWR

VDDP

VDDA

TP1

VDDA

TP2

GNDA

TP3

VPWR

TP4

VDDB

TP5

VMID

SF1

BUMPER

SF2

BUMPER

GNDA VDDB

VDDA

VMID

VSSB

VDDB

VMID

VPWR

VMID

VPWR

VDDA

VSSB

GNDA

VDDP

TP7

VDDP

OUTPUT

INPUT

3TP8

VMID

TP9

GNDA

Figure 2.1. Si8284-EVB Top Level Schematic

UG168: Si8284-EVB User's Guide

Schematics

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Resistor value and power rating for R10, R11,

R12 are depended on switching frequency and

gate loading of the IGBT/MOSFET device

JP6

JP7

JP8

FDT3612

R10 15

GNDA

TPV12

CLMP

C19

0.1uF

MMBT2222LT1

R27 NI

R15

0.1

CLMP

R16

10.0

10K

VSSB

JP4

VSSB

5.6V

JP5

JP9

DSAT Disable

R13 0

TPV9

DSAT

10uF

0.1uF

R19

10K

RST 1

FLT 1

R14

15K

IN+ 1

J10

IN - 1

NI 1

111315

121416

NI 1

111315

121416

VDDP

Prototyping area

ISOLATION

Si8284CD-IS

VDDA

VH 19

CLMP 17

RSN

GNDP

NC 22

ESW

DSAT 21

VSNS 24

GNDA

VDDB 20

SH/FC

RST

COMP 23

VL 18

FLT

RDY

VMID 16

VSSB 15

IN+

IN -

12 VSSB 13

NC 14

R3 100K C10 1.5nF

8.66K

182K

RDY 1

10uF

C22

10uF

0.1uF

CLMP

D3 ES1F

C16

390pF

DSAT

D1 B160

D2 B160

R12 1.0

100

100pF

R21

10K

VDDB

VMID

VSSB

VPWR

D7 RED

VSSB

VPWR

R25 10K

C24

0.01uF

D8 RED

VDDB

R26 10K

1. DC/DC is built to drive gate to +15/ -9V

2. To operate with positive gate drive only:

a. Remove R13

b. Install R19 = 0 Ohm

c. Change divider VDDB-VSSB = (R1/R2 + 1) x 1.05V

VDDB

C23 0.22uF

R20

18.7K

VDDB

VMID

R22

10K

R23

10K

C12

10uF

C13

0.1uF

R11 10

VDDA

R4 100

C15

0.1uF

J11

SH 1

C14

10uF

Aux. VDDP to 5V VDDA circuit

These components can be

removed if a 5V source is

available to connect to VDDA

directly.

R14 = (VDDP - 5.6 )/0.001

R6 10K

TO-247 pinout place holder

DSAT

VMID

R24 10K

D6 RED

VDDP

D5 RED

VDDA

VPWR

R18

100

C20

100pF

VDDB

+IN/-IN have weak internal pull down

(4uA).

Signal sources should be placed as close

as possible to +IN/-IN inputs to minimize

noise coupling.

+IN and - IN should be terminated directly

to VDDA/GNDA accordingly if not used.

VDDA

VDDP

VDDP = 12V to 24V

VDDP

VDDA

TPV8

IGBT_GATE

VSSB

TPV10

MOSFET_D

VSSB

TPV11

MOSFET_G

T2 25uH

VMID

D9 NI

Figure 2.2. Si8284 Circuit Schematic

UG168: Si8284-EVB User's Guide

Schematics

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3. Layout

Figure 3.1. Si8284-EVB Top Silkscreen

Figure 3.2. Si8284-EVB Top Copper

UG168: Si8284-EVB User's Guide

Layout

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Figure 3.3. Si8284-EVB Bottom Silkscreen

Figure 3.4. Si8284-EVB Bottom Copper

UG168: Si8284-EVB User's Guide

Layout

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4. Bill of Materials

Table 4.1. Si8284-EVB Bill of Materials

Part Reference Description Manufacturer Manufacturer Part

Number

C2, C20 CAP, 100 pF, 50 V, ±20%, C0G, 0603 Venkel C0603C0G500-101M

C3, C5, C7, C12,

C14, C22

CAP, 10 μF, 50 V, ±20%, X7R, 1210 Venkel C1210X7R500-106M

C4, C6, C8, C9, C13,

C15, C19

CAP, 0.1 μF, 50 V, ±10%, X7R, 0805 Venkel C0805X7R500-104K

C10 CAP, 1.5 nF, 250 V, ±10%, X7R, 0805 Venkel C0805X7R251-152K

C16 CAP, 390 pF, 50 V, ±10%, C0G, 0603 Venkel C0603C0G500-391K

C23 CAP, 0.22 μF, 25 V, ±10%, X7R, 0603 Venkel C0603X7R250-224K

C24 CAP, 0.01 μF, 10 V, ±20%, X7R, 0603 Venkel C0603X7R100-103M

D1, D2 DIO, SCHOTTKY, 60 V, 1 A, SMB Diodes Inc. B160-13-F

D3 DIO, FAST, 300 V, 1.0 A, SMA Fairchild ES1F

D4 DIO, ZENER, 5.6 V, 200 mW, SOD323 DIODES INC BZT52C5V6S-F-7

D5, D6, D7, D8 LED, RED, 631 nM, 20 mA, 2 V, 54mcd, 0603 LITE-ON TECHNOLOGY

CORP

LTST-C190KRKT

D9 DIO, SWITCH, ULTRA FAST, 800 V, 1.0 A, SMA Diodes Inc. US1K-13-F

J1, J3 CONN, TERM BLOCK 3POS, 2.54 MM, RT PCB PHOENIX CONTACT 1725669

J2 CONN, TERM BLOCK 2POS, 2.54MM, RT PCB PHOENIX CONTACT 1725656

J4, J5 Header, 8x2, 0.1in pitch, Tin Plated Samtec TSW-108-07-T-D

J6, J7, J8, J9, J10,

J11

Header, Single Pin, Tin Plated Samtec TSW-101-07-T-S

JP4, JP5, JP6, JP7,

JP8, JP9

Header, 2x1, 0.1in pitch, Tin Plated Samtec TSW-102-07-T-S

Q2 TRANSISTOR, MOSFET, N-CHNL, 100 V, 3.7A, 3 W,

Switching, SOT223

Fairchild FDT3612

Q3 TRANSISTOR, NPN, 30 V, 600 mA, SOT23 On Semi MMBT2222LT1

R1 RES, 182K, 1/10 W, ±1%, ThickFilm, 0603 Venkel CR0603-10W-1823F

R2 RES, 8.66K, 1/16 W, ±1%, ThickFilm, 0603 Venkel CR0603-16W-8661F

R3 RES, 100K, 1/10 W, ±1%, ThickFilm, 0603 Venkel CR0603-10W-1003F

R4, R5, R18 RES, 100 Ω, 1/10 W, ±1%, ThickFilm, 0603 Venkel CR0603-10W-1000F

R6, R8, R9, R21,

R22, R23, R24, R25,

R26

RES, 10K, 1/16 W, ±1%, ThickFilm, 0603 Venkel CR0603-16W-1002F

R10, R27 RES, 15 Ω, 1/4 W, ±5%, ThickFilm, 1206 Venkel CR1206-4W-150J

R11 RES, 10 Ω, 1/4 W, ±1%, ThickFilm, 1206 Venkel CR1206-4W-10R0F

R12 RES, 1.0 Ω, 1/4 W, ±5%, ThickFilm, 1206 Venkel CR1206-4W-1R0J

R13, R19 RES, 0 Ω, 2A, ThickFilm, 0805 Venkel CR0805-10W-000

R14 RES, 15K, 1/8 W, ±1%, ThickFilm, 0805 Venkel CR0805-8W-1502F

UG168: Si8284-EVB User's Guide

Bill of Materials

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Part Reference Description Manufacturer Manufacturer Part

Number

R15 RES, 0.1 Ω, 1/2 W, ±1%, ThickFilm, 1206 Venkel LCR1206-R100F

R16 RES, 10.0 Ω, 1/16 W, ±1%, ThickFilm, 0603 Venkel CR0603-16W-10R0F

R20 RES, 18.7K, 1/16 W, ±1%, ThickFilm, 0603 Venkel CR0603-16W-1872F

SF1, SF2, SF3, SF4 HDW, BUMPON CYLINDRICAL, 0.312 x 0.215, BLK 3M SJ61A6

T2 TRANSFORMER, POWER, FLYBACK, 5 kV ISOLATED,

25 μH PRIMARY, 2 windings N = 1.25, N = 0.75, SMT

Coilcraft TA7618-AL

TP1, TP2, TP3, TP4,

TP5, TP6, TP7, TP8,

TP9

TESTPOINT, BLACK, PTH Kobiconn 151-203-RC

U2 IC, 4 AMP ISODRIVER WITH INTEGRATED DC/DC CON-

VERTER, 12V UVLO, SO24 WB

SiLabs Si8284CD-IS

UG168: Si8284-EVB User's Guide

Bill of Materials

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5. Ordering Guide

Table 5.1. Si8284-EVB Ordering Guide

Ordering Part Number (OPN) Description

Si8284-KIT Si8284 Isolated gate driver evaluation board kit.

UG168: Si8284-EVB User's Guide

Ordering Guide

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