NXP Semiconductors TDA1519C Manual de usuario

DATA SHEET

Product specification

Supersedes data of 2001 Aug 24 2004 Jan 28

INTEGRATED CIRCUITS

TDA1519C

22 W BTL or 2 11 W

stereo power amplifier

2004 Jan 28 2

NXP Semiconductors Product specification

22 W BTL or 2 11 W

stereo power amplifier TDA1519C

FEATURES

Requires very few external components for Bridge-Tied

Load (BTL) operation

Stereo or BTL application

High output power

Low offset voltage at output (important for BTL

applications)

Fixed gain

Good ripple rejection

Mute/standby switch

Load dump protection

AC and DC short-circuit safe to ground and VP

Thermally protected

Reverse polarity safe

Capability to handle high energy on outputs (VP=0V)

No switch-on/switch-off plops

Protected against electrostatic discharge

Low thermal resistance

Identical inputs (inverting and non-inverting)

Pin compatible with TDA1519B (TDA1519C and

TDA1519CSP).

GENERAL DESCRIPTION

The TDA1519C is an integrated class-B dual output

amplifier in a 9-lead plastic single in-line power package or

20-lead heatsink small outline package.

For the TDA1519CTH (SOT418-3), the heatsink is

positionedon top of the package, whichallows an external

heatsink to be mounted on top. The heatsink of the

TDA1519CTD (SOT397-1) is facing the PCB, allowing the

heatsink to be soldered onto the copper area of the PCB.

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

TDA1519C SIL9P plastic single in-line power package; 9 leads SOT131-2

TDA1519CSP SMS9P plastic surface mounted single in-line power package; 9 leads SOT354-1

TDA1519CTD HSOP20 plastic, heatsink small outline package; 20 leads SOT397-1

TDA1519CTH HSOP20 plastic, heatsink small outline package; 20 leads; low stand-off height SOT418-3

2004 Jan 28 3

NXP Semiconductors Product specification

22 W BTL or 2 11 W

stereo power amplifier TDA1519C

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

VPsupply voltage operating 6.0 14.4 17.5 V

non-operating 30 V

load dump protected 45 V

IORM repetitive peak output current 4A

Iq(tot) total quiescent current 40 80 mA

Istb standby current 0.1 100 A

Isw(on) switch-on current 40 A

Inputs

Ziinput impedance BTL 25 k

stereo 50 k

Stereo application

Pooutput power THD = 10 %

RL=46W

RL=211 W

cs channel separation 40 dB

Vn(o)(rms) noise output voltage (RMS value) 150 V

BTL application

Pooutput power THD = 10 %; RL=422 W

SVRR supply voltage ripple rejection RS=0

fi=100Hz 34 dB

fi=1to10kHz 48 dB

VOODC output offset voltage 250 mV

Tjjunction temperature 150 C

2004 Jan 28 4

NXP Semiconductors Product specification

22 W BTL or 2 11 W

stereo power amplifier TDA1519C

BLOCK DIAGRAM

mgl491

input

reference

voltage power

ground

(substrate)

signal

ground

2 7

183

18.1 kW

TDA1519C

TDA1519CSP

15 kW

mute switch

power stage

standby

reference

voltage

mute

reference

voltage

NINV

INV

OUT2

M/SS

OUT1

GND1 GND2V

183

18.1 kW

mute switch

power stage

mute

switch

standby

switch

Fig.1 Block diagram.

The pin numbers refer to the TDA1519C and TDA1519CSP only, for TDA1519CTD and TDA1519CTH see Figs 3 and 4.

2004 Jan 28 5

NXP Semiconductors Product specification

22 W BTL or 2 11 W

stereo power amplifier TDA1519C

PINNING

SYMBOL PIN DESCRIPTION

TDA1519C;

TDA1519CSP TDA1519CTD TDA1519CTH

NINV 1 19 19 non-inverting input

GND1 2 20 20 ground 1 (signal)

RR 3 1 1 supply voltage ripple rejection

OUT1 4 3 3 output 1

GND2 5 5 5 ground 2 (substrate)

OUT2 6 8 8 output 2

VP7 10 10 positive supply voltage

M/SS 8 11 11 mute/standby switch input

INV 9 12 12 inverting input

n.c. 2, 4, 6, 7, 9 and 13 to 18 2, 4, 6, 7, 9 and 13 to 18 not connected

NINV

GND1

OUT1

GND2

OUT2

M/SS

INV

TDA1519C

TDA1519CSP

mgr561

Fig.2 Pin configuration

TDA1519C and

TDA1519CSP.

n.c.

OUT1

n.c.

GND2

n.c.

OUT2

n.c.

GND1

NINV

n.c.

INV

M/SS

10 11

TDA1519CTD

mgl937

Fig.3 Pin configuration

TDA1519CTD.

TDA1519CTH

GND1 RR

NINV n.c.

n.c. OUT1

n.c. n.c.

n.c. GND2

n.c. n.c.

n.c. OUT2

INV n.c.

M/SS V

001aaa348

Fig.4 Pin configuration

TDA1519CTH.

2004 Jan 28 6

NXP Semiconductors Product specification

22 W BTL or 2 11 W

stereo power amplifier TDA1519C

FUNCTIONAL DESCRIPTION

The TDA1519C contains two identical amplifiers with

differential input stages. The gain of each amplifier is fixed

at 40 dB. A special feature of this device is the

mute/standby switch which has the following features:

Low standby current (<100 A)

Low mute/standby switching current (allows for low-cost

supply switch)

Mute condition.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VPsupply voltage operating 17.5 V

non-operating 30 V

load dump protected;

during 50 ms; tr2.5 ms 45 V

Vsc AC and DC short-circuit-safe voltage 17.5 V

Vrp reverse polarity voltage 6V

Eoenergy handling capability at outputs VP=0V 200 mJ

IOSM non-repetitive peak output current 6A

IORM repetitive peak output current 4A

Ptot total power dissipation see Fig.5 25 W

Tjjunction temperature 150 C

Tstg storage temperature 55 +150 C

-25 0 50 150

mgl492

100

Ptot

(W)

Tamb (°C)

(1)

(2)

(3)

Fig.5 Power derating curve for TDA1519C.

(1) Infinite heatsink.

(2) Rth(c-a) =5K/W.

(3) Rth(c-a) =13K/W.

2004 Jan 28 7

NXP Semiconductors Product specification

22 W BTL or 2 11 W

stereo power amplifier TDA1519C

THERMAL CHARACTERISTICS

DC CHARACTERISTICS

VP=14.4V;T

amb =25C; measured in circuit of Fig.6; unless otherwise specified.

Notes

1. The circuit is DC adjusted at VP= 6 to 17.5 V and AC operating at VP= 8.5 to 17.5 V.

2. At VP= 17.5 to 30 V, the DC output voltage is 0.5VP.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient;

TDA1519C, TDA1519CTH and TDA1519CTD in free air 40 K/W

Rth(j-c) thermal resistance from junction to case;

TDA1519C, TDA1519CTH and TDA1519CTD 3K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

VPsupply voltage note 1 6.0 14.4 17.5 V

Iq(tot) total quiescent current 40 80 mA

VODC output voltage note 2 6.95 V

VOODC output offset voltage 250 mV

Mute/standby switch

Vsw(on) switch-on voltage level 8.5 V

Vmute mute voltage level 3.3 6.4 V

Vstb standby voltage level 0 2V

Mute/standby condition

Vooutput voltage mute mode; Vi= 1 V (maximum);

fi=20Hzto15kHz 20 mV

VOODC output offset voltage mute mode 250 mV

Istb standby current standby mode 100 A

Isw(on) switch-on current 12 40 A

2004 Jan 28 8

NXP Semiconductors Product specification

22 W BTL or 2 11 W

stereo power amplifier TDA1519C

AC CHARACTERISTICS

VP=14.4V;R

L=4; f = 1 kHz; Tamb =25C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Stereo application (see Fig.6)

Pooutput power note 1

THD = 0.5 % 4 5 W

THD = 10 % 5.5 6.0 W

RL=2; note 1

THD = 0.5 % 7.5 8.5 W

THD = 10 % 10 11 W

THD total harmonic distortion Po=1W 0.1 %

fro(l) low frequency roll-off 3dB;note2 45 Hz

fro(h) high frequency roll-off 1dB 20 kHz

Gv(cl) closed-loop voltage gain 39 40 41 dB

SVRR supply voltage ripple rejection on; notes 3 and 4 40 dB

on; notes 3 and 5 45 dB

mute; notes 3 and 6 45 dB

standby; notes 3

and 6 80 dB

Ziinput impedance 50 60 75 k

Vn(o)(rms) noise output voltage (RMS value) note 7

on; RS=0150 V

on; RS=10k 250 500 V

mute; note 8 120 V

cs channel separation RS=10k40 dB

Gv(ub)channel unbalance 0.1 1 dB

BTL application (see Fig.7)

Pooutput power note 1

THD = 0.5 % 15 17 W

THD = 10 % 20 22 W

VP= 13.2 V; note 1

THD = 0.5 % 13 W

THD = 10 % 17.5 W

THD total harmonic distortion Po=1W 0.1 %

Bppower bandwidth THD = 0.5 %;

Po=1 dB; with

respect to 15 W

35 to 15000 Hz

fro(l) low frequency roll-off 1dB;note2 45 Hz

fro(h) high frequency roll-off 1dB 20 kHz

Gv(cl) closed-loop voltage gain 45 46 47 dB

2004 Jan 28 9

NXP Semiconductors Product specification

22 W BTL or 2 11 W

stereo power amplifier TDA1519C

Notes

1. Output power is measured directly at the output pins of the device.

2. Frequency response externally fixed.

3. Ripple rejection measured at the output with a source impedance of 0 (maximum ripple amplitude of 2 V).

4. Frequency f = 100 Hz.

5. Frequency between 1 and 10 kHz.

6. Frequency between 100 Hz and 10 kHz.

7. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.

8. Noise output voltage independent of RS(Vi=0V).

SVRR supply voltage ripple rejection on; notes 3 and 4 34 dB

on; notes 3 and 5 48 dB

mute; notes 3 and 6 48 dB

standby;

notes 3 and 6 80 dB

Ziinput impedance 25 30 38 k

Vn(o)(rms) noise output voltage (RMS value) note 7

on; RS=0200 V

on; RS=10k 350 700 V

mute; note 8 180 V

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

2004 Jan 28 10

NXP Semiconductors Product specification

22 W BTL or 2 11 W

stereo power amplifier TDA1519C

APPLICATION INFORMATION

2200

µF

1000

µF

100 µF 100

220 nF 60 kW

input

reference

voltage

40 dB

1220 nF

60 kW

40 dB

546

inverting inputnon-inverting input

internal

1/2 VP

power

ground

signal

ground

TDA1519C

standby switch

mgl493

Fig.6 Stereo application diagram (TDA1519C).

2200

µF

100

220 nF 60 kW

RL= 4 W

input

reference

voltage

40 dB

160 kW

40 dB

546

non-inverting input

to pin 9

internal

1/2 V

power

ground

signal

ground

TDA1519C

standby switch

mgl494

to pin 1

Fig.7 BTL application diagram (TDA1519C).

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