NXP Semiconductors SA58670A Manual operacional
1. General description
The SA58670A is a stereo, filter-free class-D audio amplifier which is available in an
HVQFN20 package with the exposed Die Attach Paddle (DAP).
The SA58670A features independent shutdown controls for each channel. The gain may
be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity
to noise and RF rectification is increased by high PSRR and differential circuit topology.
Fast start-up time and small package makes it an ideal choice for both cellular handsets
and PDAs.
The SA58670A delivers 1.4 W/channel at 5.0 V and 720 mW/channel at 3.6 V into 8 Ω. It
delivers 2.1 W/channel at 5.0 V into 4 Ω. The maximum power efficiency is excellent at
70 % to 74 % into 4 Ωand 84 % to 88 % into 8 Ω. The SA58670A provides thermal and
short-circuit shutdown protection.
2. Features
nOutput power:
u2.1 W/channel into 4 Ωat 5.0 V
u1.4 W/channel into 8 Ωat 5.0 V
u720 mW/channel into 8 Ωat 3.6 V
nSupply voltage: 2.5 V to 5.5 V
nIndependent shutdown control for each channel
nSelectable gain: 6 dB, 12 dB, 18 dB and 24 dB
nHigh SVRR: −77 dB at 217 Hz
nFast start-up time: 3.5 ms
nLow supply current
nLow shutdown current
nShort-circuit and thermal protection
nSpace savings with 4 mm ×4 mm HVQFN20 package
nLow junction to ambient thermal resistance of 24 K/W with exposed DAP
3. Applications
nWireless and cellular handset and PDA
nPortable DVD player
nUSB speaker
nNotebook PC
nPortable radio and gaming
SA58670A
2.1 W/channel stereo class-D audio amplifier
Rev. 02 — 23 October 2008 Product data sheet
SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 2 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
nEducational toy
4. Ordering information
5. Block diagram
Table 1. Ordering information
Type number Package
Name Description Version
SA58670ABS HVQFN20 plastic thermal enhanced very thin quad flat package;
no leads; 20 terminals; body 4 ×4×0.85 mm SOT917-1
Refer to Table 6 for gain selection.
Fig 1. Block diagram
002aad663
SA58670A
SDR
16
17
INRP
INRN GAIN
ADJUST
6, 10
n.c.
right input PWM H-
BRIDGE
14
11
OUTRP
3, 13 PVDD
OUTRN
VDD
9 AVDD VDD
4, 12 PGND
18 AGND
INTERNAL
OSCILLATOR
20
19
INLP
INLN GAIN
ADJUST
left input PWM H-
BRIDGE
OUTLP
OUTLN
2
5
G0
G1
15
1
8
7
300 kΩ
SDL
300 kΩ
BIAS
CIRCUITRY
GND
SHORT-CIRCUIT
PROTECTION
SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 3 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
6. Pinning information
6.1 Pinning
6.2 Pin description
(1) Exposed Die Attach Paddle (DAP).
Fig 2. Pin configuration for HVQFN20
002aad664
SA58670ABS
Transparent top view
OUTRN
PGND
OUTLN
PGND
PVDD PVDD
OUTLP OUTRP
G1 G0
n.c.
SDL
SDR
AVDD
n.c.
INLP
INLN
AGND
INRN
INRP
511
412
313
214
115
6
7
8
9
10
20
19
18
17
16
terminal 1
index area
DAP(1)
Table 2. Pin description
Symbol Pin Description
G1 1 gain select input 1
OUTLP 2 left channel positive output
PVDD 3 power supply voltage (level same as AVDD)
PGND 4 power ground
OUTLN 5 left channel negative output
n.c. 6 not connected
SDL 7 left channel shutdown input (active LOW)
SDR 8 right channel shutdown input (active LOW)
AVDD 9 analog supply voltage (level same as PVDD)
n.c. 10 not connected
OUTRN 11 right channel negative output
PGND 12 power ground
PVDD 13 power supply voltage (level same as AVDD)
OUTRP 14 right channel positive output
G0 15 gain select input 0
INRP 16 right channel positive input
INRN 17 right channel negative input
AGND 18 analog ground
SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 4 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
7. Limiting values
[1] VDD is the supply voltage on pins PVDD and pin AVDD.
GND is the voltage ground on pins PGND and pin AGND.
INLN 19 left channel negative input
INLP 20 left channel positive input
- (DAP) exposed die attach paddle; connect to ground plane heat spreader
Table 2. Pin description
…continued
Symbol Pin Description
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol Parameter Conditions Min Max Unit
VDD supply voltage Active mode −0.3 +6.0 V
Shutdown mode −0.3 +7.0 V
VIinput voltage pin SDL GND VDD V
pin SDR GND VDD V
other pins −0.3 VDD + 0.3 V
P power dissipation derating factor 41.6 mW/K
Tamb =25°C - 5.2 W
Tamb =75°C - 3.12 W
Tamb =85°C - 2.7 W
Tamb ambient temperature operating in free air −40 +85 °C
Tjjunction temperature operating −40 +150 °C
Tstg storage temperature −65 +85 °C
Vesd electrostatic discharge
voltage human body model ±2000 - V
machine model ±200 - V
SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 5 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
8. Static characteristics
[1] VDD is the supply voltage on pins PVDD and pin AVDD.
GND is the ground supply voltage on pins PGND and pin AGND.
Table 4. Static characteristics
T
amb
=25
°
C; unless otherwise specified
[1]
.
Symbol Parameter Conditions Min Typ Max Unit
VDD supply voltage operating 2.5 - 5.5 V
IDD supply current VDD = 2.5 V; no load - 4 6 mA
VDD = 3.6 V; no load - 5 7.5 mA
VDD = 5.5 V; no load - 6 9 mA
IDD(sd) shutdown mode supply current no input signal;
VSDR =V
SDL = GND - 10 1000 nA
PSRR power supply rejection ratio VDD = 2.5 V to 5.5 V - −75 −55 dB
Vi(cm) common-mode input voltage 0.5 - VDD −0.8 V
CMRR common mode rejection ratio inputs are shorted together;
VDD = 2.5 V to 5.5 V -−69 −50 dB
VIH HIGH-level input voltage VDD = 2.5 V to 5.5 V;
pins SDL, SDR, G0, G1 1.3 - VDD V
VIL LOW-level input voltage VDD = 2.5 V to 5.5 V;
pins SDL, SDR, G0, G1 0 - 0.35 V
IIH HIGH-level input current VDD = 5.5 V; VI=V
DD --50 µA
IIL LOW-level input current VDD = 5.5 V; VI=0V --5 µA
fsw switching frequency VDD = 2.5 V to 5.5 V 250 300 350 kHz
Gv(cl) closed-loop voltage gain VG0 = VG1 = 0.35 V 5.5 6 6.5 dB
VG0 = VDD; VG1 = 0.35 V 11.5 12 12.5 dB
VG0 = 0.35 V; VG1 = VDD 17.5 18 18.5 dB
VG0 = VG1 = VDD 23.5 24 24.5 dB
Pins OUTLP, OUTLN, OUTRP and OUTRN
RDSon drain-source on-state resistance VDD = 2.5 V - 700 - mΩ
VDD = 3.6 V - 570 - mΩ
VDD = 5.5 V - 500 - mΩ
|VO(offset)|output offset voltage measureddifferentially;inputs
AC grounded; Gv(cl) = 6 dB;
VDD = 2.5 V to 5.5 V
- 5 10 mV
Zo(sd) shutdown mode output impedance VSDR = VSDL = 0.35 V - 2 - kΩ
SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 6 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
9. Dynamic characteristics
[1] VDD is the supply voltage on pins PVDD and pin AVDD.
Table 5. Dynamic characteristics
T
amb
=25
°
C; R
L
=8
Ω
; unless otherwise specified
[1]
.
Symbol Parameter Conditions Min Typ Max Unit
Pooutput power per channel; f = 1 kHz; THD+N = 10 %
RL=8Ω; VDD = 3.6 V - 0.72 - W
RL=8Ω; VDD = 5.0 V - 1.4 - W
RL=4Ω; VDD = 5.0 V - 2.1 - W
THD+N total harmonic
distortion-plus-noise VDD = 5.0 V; Gv(cl) = 6 dB; f=1kHz
Po= 0.5 W - 0.11 - %
Po= 1.0 W - 0.14 - %
SVRR supply voltage ripple
rejection Gv(cl) = 6 dB; f = 217 Hz
VDD = 3.6 V - −73 - dB
VDD = 5.0 V - −77 - dB
CMRR common mode rejection
ratio VDD = 5.0 V; Gv(cl) = 6 dB; f = 217 Hz - −69 - dB
Ziinput impedance Gv(cl) = 6 dB - 28.1 - kΩ
Gv(cl) = 12 dB - 17.3 - kΩ
Gv(cl) = 18 dB - 9.8 - kΩ
Gv(cl) = 24 dB - 5.2 - kΩ
td(sd-startup) delay time from
shutdown to start-up VDD = 3.6 V - 3.5 - ms
Vn(o) output noise voltage VDD = 3.6 V; f = 20 Hz to 20 kHz;
inputs are AC grounded
no weighting - 35 - µV
A weighting - 27 - µV
SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 7 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
10. Typical performance curves
a. Gv(cl) =24dB
b. Gv(cl) = 6 dB.
fi= 1 kHz.
(1) VDD = 2.5 V.
(2) VDD = 3.6 V.
(3) VDD = 5.0 V.
Fig 3. Total harmonic distortion-plus-noise as a function of output power; RL=8Ω
001aah484
Po(W)
10−510110−1
10−410−2
10−3
10−1
1
10
102
10−2
THD+N
(%)
(1) (2) (3)
001aah485
Po(W)
10−510110−1
10−410−2
10−3
10−1
1
10
102
10−2
THD+N
(%)
(1) (2) (3)
SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 8 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
a. Gv(cl) =24dB.
b. Gv(cl) = 6 dB.
fi= 1 kHz.
(1) VDD = 2.5 V.
(2) VDD = 3.6 V.
(3) VDD = 5.0 V.
Fig 4. Total harmonic distortion-plus-noise as a function of output power; RL=4Ω
001aah486
Po(W)
10−510110−1
10−410−2
10−3
10−1
1
10
102
10−2
THD+N
(%)
(1) (2) (3)
001aah487
Po(W)
10−510110−1
10−410−2
10−3
10−1
1
10
102
10−2
THD+N
(%) (1) (2) (3)
SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 9 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
(1) Po= 350 mW; Vi= 590 mV (RMS).
(2) Po= 240 mW; Vi= 490 mV (RMS).
(3) Po= 120 mW; Vi= 346 mV (RMS).
a. RL=4Ω
(1) Po= 260 mW; Vi= 721.1 mV (RMS).
(2) Po= 180 mW; Vi= 600 mV (RMS).
(3) Po= 90 mW; Vi= 424.3 mV (RMS).
b. RL=8Ω
Gv(cl) =6dB.
Fig 5. Total harmonic distortion-plus-noise as a function of frequency; VDD = 2.5 V
001aah488
f (Hz)
10 105
104
102103
10−1
10−2
1
10−3
THD+N
(%)
(1)
(2)
(3)
001aah489
f (Hz)
10 105
104
102103
10−1
10−2
1
10−3
THD+N
(%) (1)
(2)
(3)
SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 10 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
(1) Po= 825 mW; Vi= 908.3 mV (RMS).
(2) Po= 550 mW; Vi= 741.6 mV (RMS).
(3) Po= 275 mW; Vi= 524.4 mV (RMS).
a. RL=4Ω
(1) Po= 560 mW; Vi= 1.058 V (RMS).
(2) Po= 375 mW; Vi= 866 mV (RMS).
(3) Po= 190 mW; Vi= 616.4 mV (RMS).
b. RL=8Ω
Gv(cl) =6dB.
Fig 6. Total harmonic distortion-plus-noise as a function of frequency; VDD = 3.6 V
001aah490
f (Hz)
10 105
104
102103
10−1
10−2
1
10−3
THD+N
(%) (1)
(2)
(3)
001aah491
f (Hz)
10 105
104
102103
10−1
10−2
1
10−3
THD+N
(%) (1)
(2)
(3)
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