Cypress CY62128B Manual de usuario

1-Mbit (128K x 8) Static RAM

CY62128B

MoBL®

Cypress Semiconductor Corporation • 3901 North First Street • San Jose,CA 95134 • 408-943-2600

Document #: 38-05300 Rev. *C Revised March 7, 2005

Features

• Temperature Ranges

—Commercial: 0°C to 70°C

—Industrial: –40°C to 85°C

—Automotive: –40°C to 125°C

• 4.5V–5.5V operation

• CMOS for optimum speed/power

• Low active power

(70 ns, LL version, Commercial, Industrial)

—82.5 mW (max.) (15 mA)

• Low standby power

(70 ns, LL version, Commercial, Industrial)

—110µW (max.) (15 µA)

• Automatic power-down when deselected

• TTL-compatible inputs and outputs

• EasymemoryexpansionwithCE1,CE2,andOEoptions

Functional Description[1]

The CY62128B is a high-performance CMOS static RAM

organized as 131,072 words by 8 bits. Easy memory

expansion is provided by an active LOW Chip Enable (CE1),

an active HIGH Chip Enable (CE2), an active LOW Output

Enable (OE), and three-state drivers. This device has an

automatic power-down feature that reduces power

consumption by more than 75% when deselected.

Writing to the device is accomplished by taking Chip Enable

One (CE1) and Write Enable (WE) inputs LOW and Chip

Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O0

through I/O7) is then written into the location specified on the

address pins (A0through A16).

Reading from the device is accomplished by taking Chip

Enable One (CE1) and Output Enable (OE) LOW while forcing

Write Enable (WE) and Chip Enable Two (CE2) HIGH. Under

these conditions, the contents of the memory location

specified by the address pins will appear on the I/O pins.

The eight input/output pins (I/O0through I/O7) are placed in a

high-impedance state when the device is deselected (CE1

HIGH or CE2LOW), the outputs are disabled (OE HIGH), or

duringawrite operation (CE1LOW,CE2HIGH,andWELOW).

The CY62128B is available in a standard 450-mil-wide SOIC,

32-pin TSOP type I and STSOP packages.

Note:

1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.

Logic Block Diagram

COLUMN

DECODER

ROW DECODER

SENSE AMPS

INPUT BUFFER

POWER

DOWN

I/O0

CE2

I/O1

I/O2

I/O3

512x256x8

ARRAY

I/O7

I/O6

I/O5

I/O4

A11

A13

A12

A10

CE1

A16

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Document #: 38-05300 Rev. *C Page 2 of 11

Pin Configurations

Product Portfolio

Product VCC Range (V) Speed

(ns)

Power Dissipation

Operating, ICC

(mA) Standby, ISB2

(µA)

Min. Typ.[2] Max. Typ.[2] Max. Typ.[2] Max.

CY62128BLL Industrial 4.5 5.0 5.5 55 7.5 20 2.5 15

Industrial 70 6 15 2.5 15

Automotive 70 6 25 2.5 25

Pin Definitions

Input A0-A16. Address Inputs

Input/Output I/O0-I/O7. Data lines. Used as input or output lines depending on operation

Input/Control WE. Write Enable, Active LOW. When selected LOW, a WRITE is conducted. When selected HIGH, a READ

is conducted.

Input/Control CE1. Chip Enable 1, Active LOW.

Input/Control CE2. Chip Enable 2, Active HIGH.

Input/Control OE. Output Enable, Active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as

outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins

Ground GND. Ground for the device

Power Supply VCC. Power supply for the device

Note:

2. Typical values are included for reference only and are not tested or guaranteed. Typical values are an average of the distribution across normal production

variations as measured at VCC = 5.0V, TA= 25°C, and tAA = 70 ns.

14 19

Top View

15 17

A16

A14

A12

VCC

A15

A13

I/O

A10

I/O

A11

A16

A14

A12

VCC

A13

A9OE

TSOP I

Top View

(not to scale)

I/O2

I/O1

GND

I/O7

I/O4

I/O5

I/O0

CE1

A11

A517

CE2

A15

A10

I/O3

SOIC

A16

A14

A12

VCC

A13

A9OE

Reverse TSOP I

I/O2

I/O1

GND

I/O7

I/O4

I/O5

I/O6

I/O0

CE1

A11

A517

CE2

A15

A10

I/O3

(not to scale)

Top View

A16

A14

A12

VCC

A13

A9OE

STSOP

Top View

(not to scale)

I/O2

I/O1

GND

I/O7

I/O4

I/O5

I/O6

I/O0

CE1

A11

A59

CE2

A15

A10

I/O3

gnc

GND

I/O6

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Document #: 38-05300 Rev. *C Page 3 of 11

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied.............................................–55°C to +125°C

Supply Voltage on VCC to Relative GND[3] ....–0.5V to +7.0V

DC Voltage Applied to Outputs

in High-Z State[3]....................................–0.5V to VCC + 0.5V

DC Input Voltage[3].................................–0.5V to VCC + 0.5V

Current into Outputs (LOW).........................................20 mA

Static Discharge Voltage...........................................> 2001V

(per MIL-STD-883, Method 3015)

Latch-up Current.....................................................> 200 mA

Operating Range

Range Ambient

Temperature (TA)[4] VCC

Commercial 0°C to +70°C 5V ±10%

Industrial –40°C to +85°C5V±10%

Automotive –40°C to +125°C5V±10%

Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions CY62128B-55 CY62128B-70 Unit

Min. Typ.[2] Max. Min. Typ.[2] Max.

VOH Output HIGH Voltage VCC = Min., IOH = –1.0 mA 2.4 2.4 V

VOL Output LOW Voltage VCC = Min., IOL = 2.1 mA 0.4 0.4 V

VIH Input HIGH Voltage 2.2 VCC

+ 0.3 2.2 VCC

+ 0.3 V

VIL Input LOW Voltage[3] –0.3 0.8 –0.3 0.8 V

IIX Input Load Current GND ≤VI≤VCC –1 +1 –1 +1 µA

Automotive –10 +10 µA

IOZ Output Leakage

Current GND ≤VI ≤VCC,

Output Disabled –1 +1 –1 +1 µA

Automotive –10 +10 µA

IOS Output Short Circuit

Current[5] VCC = Max., VOUT = GND –300 –300 mA

ICC VCC Operating

Supply Current VCC = Max.,

IOUT = 0 mA,

f = fMAX = 1/tRC

Industrial,

Commercial 7.5 20 6 15 mA

Automotive 625mA

ISB1 Automatic CE

Power-down Current

—TTL Inputs

Max. VCC,

CE1≥VIH

or CE2< VIL,

VIN ≥VIH or

VIN ≤VIL, f = fMAX

Industrial

Commercial 0.1 20.11mA

Automotive 0.1 2 mA

ISB2 Automatic CE

Power-down Current

—CMOS Inputs

Max. VCC,

CE1≥VCC – 0.3V,

or CE2≤0.3V,

VIN ≥VCC – 0.3V,

or VIN ≤0.3V, f = 0

Industrial

Commercial 2.5 15 2.5 15 µA

Automotive 2.5 25 µA

Notes:

3. VIL (min.) = –2.0V for pulse durations of less than 20 ns.

4. TAis the “Instant On” case temperature.

5. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.

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Document #: 38-05300 Rev. *C Page 4 of 11

Thermal Resistance[6]

Parameter Description Test Conditions 32 SOIC 32 TSOP 32 STSOP 32 RTSOP Unit

ΘJA Thermal Resistance

(Junction to Ambient) Test conditions follow standard test

methods and procedures for

measuring thermal impedance, per

EIA / JESD51.

66.17 97.44 105.14 97.44 °C/W

ΘJC Thermal Resistance

(Junction to Case) 30.87 26.05 14.09 26.05 °C/W

Capacitance[6]

Parameter Description Test Conditions Max. Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz,

VCC = 5.0V 9pF

COUT Output Capacitance 9 pF

AC Test Loads and Waveforms

90%

10%

VCC

GND

90%

10%

ALL INPUT PULSES

OUTPUT 100 pF

INCLUDING

JIG AND

SCOPE

OUTPUT

5 pF

INCLUDING

JIG AND

SCOPE

(a) (b)

OUTPUT

R1 1800ΩR1 1800Ω

990 R2

990Ω

639Ω

Equivalent to: THÉVENIN EQUIVALENT

1.77V

Rise TIme:

1 V/ns Fall TIme

1 V/ns

Ω

Data Retention Waveform

Data Retention Characteristics (Over the Operating Range for “LL” version only)

Parameter Description Conditions Min. Typ. Max. Unit

VDR VCC for Data Retention 2.0 V

ICCDR Data Retention Current VCC = VDR = 2.0V, CE1≥ VCC – 0.3V,

or CE2≤0.3V, VIN ≥VCC – 0.3V or, VIN ≤

0.3V

1.5 15 µA

tCDR Chip Deselect to Data Retention

Time 0ns

tROperation Recovery Time 70 ns

Note:

6. Tested initially and after any design or process changes that may affect these parameters.

VCC, min.

tCDR VDR >2 V

DATA RETENTION MODE

CE1

VCC

CE2

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Document #: 38-05300 Rev. *C Page 5 of 11

Switching Characteristics[7] Over the Operating Range

Parameter Description

62128B-55 62128B-70

UnitMin. Max. Min. Max.

READ CYCLE

tRC Read Cycle Time 55 70 ns

tAA Address to Data Valid 55 70 ns

tOHA Data Hold from Address Change 5 5 ns

tACE CE1LOW to Data Valid, CE2HIGH to Data Valid 55 70 ns

tDOE OE LOW to Data Valid 20 35 ns

tLZOE OE LOW to Low Z 0 0 ns

tHZOE OE HIGH to High Z[7, 9] 20 25 ns

tLZCE CE1LOW to Low Z, CE2HIGH to Low Z[9] 55ns

tHZCE CE1HIGH to High Z, CE2LOW to High Z[8, 9] 20 25 ns

tPU CE1LOW to Power-up, CE2HIGH to Power-up 0 0 ns

tPD CE1HIGH to Power-down, CE2LOW to Power-down 55 70 ns

WRITE CYCLE[10]

tWC Write Cycle Time 55 70 ns

tSCE CE1LOW to Write End, CE2HIGH to Write End 45 60 ns

tAW Address Set-up to Write End 45 60 ns

tHA Address Hold from Write End 0 0 ns

tSA Address Set-up to Write Start 0 0 ns

tPWE WE Pulse Width 45 50 ns

tSD Data Set-up to Write End 25 30 ns

tHD Data Hold from Write End 0 0 ns

tLZWE WE HIGH to Low Z[9] 55ns

tHZWE WE LOW to High Z[8, 9] 20 25 ns

Switching Waveforms

Read Cycle No.1[12, 13]

Notes:

7. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified

IOL/IOH and 100-pF load capacitance.

8. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.

9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

10. The internal write time of the memory is defined by the overlap of CE1LOW, CE2HIGH, and WE LOW. CE1and WE must be LOW and CE2HIGH to initiate a write,

and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates

the write.

11. No input may exceed VCC + 0.5V.

12. Device is continuously selected. OE, CE1= VIL, CE2= VIH.

13. WE is HIGH for read cycle.

PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

ADDRESS

DATA OUT

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Document #: 38-05300 Rev. *C Page 6 of 11

Read Cycle No. 2 (OE Controlled)[13, 14]

Write Cycle No. 1 (CE1or CE2Controlled)[15, 16]

Notes:

14. Address valid prior to or coincident with CE1transition LOW and CE2transition HIGH.

15. Data I/O is high impedance if OE= VIH.

16. If CE1goes HIGH or CE2goes LOW simultaneously with WE going HIGH, the outputremains in a high-impedance state.

Switching Waveforms (continued)

50%

DATA VALID

tRC

tACE

tDOE

tLZOE

tLZCE

tPU

HIGH IMPEDANCE

tHZOE tHZCE

tPD

HIGH

CE1

ICC

ISB

IMPEDANCE

ADDRESS

CE2

DATA OUT

VCC

SUPPLY

CURRENT

tWC

DATA VALID

tAW

tSA

tPWE

tHA

tHD

tSD

tSCE

CE1

ADDRESS

CE2

DATA I/O

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CY62128B

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Document #: 38-05300 Rev. *C Page 7 of 11

Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[15, 16]

Write Cycle No.3 (WE Controlled, OE LOW)[15, 16]

Note:

17. During this period the I/Os are in the output state and input signals should not be applied.

Switching Waveforms (continued)

tHD

tSD

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZOE

DATAINVALID

CE1

ADDRESS

CE2

DATA I/O

NOTE 17

DATA VALID

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

CE1

ADDRESS

CE2

DATAI/O NOTE 17

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Document #: 38-05300 Rev. *C Page 8 of 11

Truth Table

CE1CE2OE WE I/O0–I/O7Mode Power

H X X X High Z Power-down Standby (ISB)

X L X X High Z Power-down Standby (ISB)

LHLHDataOut Read Active(I

CC)

L H X L Data In Write Active (ICC)

L H H H High Z Selected, Outputs Disabled Active (ICC)

Ordering Information

Speed (ns) Ordering Code Package Name Package Type Operating Range

55 CY62128BLL-55SI S34 32-Lead 450-Mil SOIC Industrial

CY62128BLL-55SXI S34 32-Lead 450-Mil SOIC (Pb-Free) Industrial

CY62128BLL-55SC S34 32-Lead 450-Mil SOIC Commercial

CY62128BLL-55SXC S34 32-Lead 450-Mil SOIC (Pb-Free) Commercial

CY62128BLL-55ZI Z32 32-Lead TSOP Type I Industrial

CY62128BLL-55ZXI Z32 32-Lead TSOP Type I (Pb-Free) Industrial

CY62128BLL-55ZAI ZA32 32-Lead STSOP Type I Industrial

CY62128BLL-55ZAXI ZA32 32-Lead STSOP Type I (Pb-Free) Industrial

CY62128BLL-55ZRI ZR32 32-Lead Reverse TSOP Type I Industrial

70 CY62128BLL-70SI S34 32-Lead 450-Mil SOIC I Industrial

CY62128BLL-70SXI S34 32-Lead 450-Mil SOIC I (Pb-Free) Industrial

CY62128BLL-70SC S34 32-Lead 450-Mil SOIC I Commercial

CY62128BLL-70SXC S34 32-Lead 450-Mil SOIC I (Pb-Free) Commercial

CY62128BLL-70SE S34 32-Lead 450-Mil SOIC I Automotive

CY62128BLL-70SXE S34 32-Lead 450-Mil SOIC I (Pb-Free) Automotive

CY62128BLL-70ZI Z32 32-Lead TSOP Type I Industrial

CY62128BLL-70ZC Z32 32-Lead TSOP Type I Commercial

CY62128BLL-70ZE Z32 32-Lead TSOP Type I Automotive

CY62128BLL-70ZXE Z32 32-Lead TSOP Type I (Pb-Free) Automotive

CY62128BLL-70ZAI ZA32 32-Lead STSOP Type I Industrial

CY62128BLL-70ZAXI ZA32 32-Lead STSOP Type I (Pb-Free) Industrial

CY62128BLL-70ZAE ZA32 32-Lead STSOP Type I Automotive

CY62128BLL-70ZAXE ZA32 32-Lead STSOP Type I (Pb-Free) Automotive

CY62128BLL-70ZRXE ZR32 32-Lead Reverse TSOP Type I (Pb-Free) Automotive

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Document #: 38-05300 Rev. *C Page 9 of 11

Package Diagrams

0.546[13.868]

0.440[11.176]

0.101[2.565]

0.050[1.270]

0.014[0.355]

0.118[2.997]

0.004[0.102]

0.047[1.193]

0.006[0.152]

0.023[0.584]

0.793[20.142]

0.450[11.430]

0.566[14.376]

0.111[2.819]

0.817[20.751]

BSC.

0.020[0.508]

MIN.

MAX.

0.012[0.304]

0.039[0.990]

0.063[1.600]

SEATING PLANE

116

17 32

0.004[0.102]

32-Lead (450 MIL) Molded SOIC S34

51-85081-*B

51-85056-*D

32-Lead Thin Small Outline Package Type I (8x20 mm) Z32

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Document #: 38-05300 Rev. *C Page 10 of 11

of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be

used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its

products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress

products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

All product and company names mentioned in this document are the trademarks of their respective holders.

Package Diagrams (continued)

32-Lead Shrunk Thin Small Outline Package (8x13.4 mm) ZA32

51-85094-*D

51-85089-*C

32-Lead Reverse Thin Small Outline Package ZR32

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