Cypress AutoStore STK17T88 Manual de usuario

STK17T88

32K x 8 AutoStore™ nvSRAM with

Real Time Clock

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 •408-943-2600

Document Number: 001-52040 Rev. *A Revised March 17, 2009

Features

■nvSRAM Combined With Integrated Real-Time Clock

Functions (RTC, Watchdog Timer, Clock Alarm, Power

Monitor)

■Capacitor or Battery Backup for RTC

■25, 45 ns Read Access and R/W Cycle Time

■Unlimited Read/Write Endurance

■Automatic Nonvolatile STORE on Power Loss

■Nonvolatile STORE Under Hardware or Software Control

■Automatic RECALL to SRAM on Power Up

■Unlimited RECALL Cycles

■200K STORE Cycles

■20-Year Nonvolatile Data Retention

■Single 3V +20%, -10% Power Supply

■Commercial and Industrial Temperatures

■48-pin 300-mil SSOP Package (RoHS-Compliant)

Description

The Cypress STK17T88 combines a 256 Kb nonvolatile static

RAM (nvSRAM) with a full-featured real-time clock in a reliable,

monolithic integrated circuit.

The 256 Kb nvSRAM is a fast static RAM with a nonvolatile

Quantum Trap storage element included with each memory cell.

The SRAM provides the fast access and cycle times, ease of use

and unlimited read and write endurance of a normal SRAM. Data

transfers automatically to the nonvolatile storage cells when

power loss is detected (the STORE operation). On power up,

data is automatically restored to the SRAM (the RECALL

operation). Both STORE and RECALL operations are also

available under software control.

The real time clock function provides an accurate clock with leap

year tracking and a programmable, high accuracy oscillator. The

Alarm function is programmable for one-time alarms or periodic

minutes, hours, or days alarms. There is also a programmable

watchdog timer for processor control.

ROW DECODERINPUT BUFFERS

COLUMN DEC

COLUMN I/O

POWER

CONTROL

HSB

STORE/

RECALL

CONTROL

SOFTWARE

DETECT A13 – A0

STORE

RECALL

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

VCC VCAP

RTC

MUX A14 – A0

INT

VRTCbat

VRTCcap

A11

A12

A13

A14

A0A1A2A3A4A10

Quantum Trap

512 X 512

STATIC RAM

ARRAY

512 X 512

Logic Block Diagram

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STK17T88

Document Number: 001-52040 Rev. *A Page 2 of 22

Pin Configurations

Figure 1. 48-Pin SSOP

CAP

INT

HSB

CNCN

RTCbat

RTCcap

(TOP)

Note

1. For detailed package size specifications, see Package Diagram on page 21.

Pin Descriptions

Pin Name IO Type Description

A14-A0Input Address:The 15addressinputsselectoneof32,768bytes in the nvSRAMarray or one of16 bytes

in the clock register map.

DQ7-DQ0I/O Data: Bi-directional 8-bit data bus for accessing the nvSRAM and RTC.

EInput Chip Enable: The active low E input selects the device.

WInput Write Enable: The active low W enables data on the DQ pins to be written to the address location

selected on the falling edge of E.

GInput Output Enable: The active low G input enables the data output buffers during read cycles.

De-asserting G high caused the DQ pins to tri-state.

X1Output Crystal Connection, drives crystal on startup.

X2Input Crystal Connection for 32.768 kHz crystal.

VRTCcap Power Supply Capacitor supplied backup RTC supply voltage (Left unconnected if VRTCbat is used).

VRTCbat Power Supply Battery supplied backup RTC supply voltage (Left unconnected if VRTCcap is used).

VCC Power Supply Power: 3.0V, +20%, -10%

HSB I/O Hardware Store Busy: When low this output indicates a Store is in progress. When pulled low

external to the chip, it initiates a nonvolatile STORE operation. A weak pull up resistor keeps this

pin high if not connected. (Connection Optional).

INT Output Interrupt Control: Can be programmed to respond to the clock alarm, the watchdog timer and the

power monitor. Programmable to either active high (push/pull) or active low (open-drain)

VCAP Power Supply Autostore™ Capacitor: Supplies power to nvSRAM during power loss to store data from SRAM

to nonvolatile storage elements.

VSS Power Supply Ground

NC No Connect Unlabeled pins have no internal connections.

Relative PCB Area Usage[1]

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STK17T88

Document Number: 001-52040 Rev. *A Page 3 of 22

Absolute Maximum Ratings

Voltage on Input Relative to Ground.................–0.5V to 4.1V

Voltage on Input Relative to VSS...........–0.5V to (VCC + 0.5V)

Voltage on DQ0-7 or HSB......................–0.5V to (VCC + 0.5V)

Temperature under Bias............................... –55°C to 125°C

Junction Temperature................................... –55°C to 140°C

Storage Temperature.................................... –65°C to 150°C

Power Dissipation.............................................................1W

DC Output Current (1 output at a time, 1s duration)....15 mA

RF (SSOP-48) Package Thermal Characteristics

θjc 6.2 C/W; θja 51.1 [0fpm], 44.7 [200fpm], 41.8 C/W [500fpm]

Note: Stresses greater than those listed under “Absolute

Maximum Ratings” may cause permanent damage tothe device.

This is a stress rating only, and functional operation of the device

at conditions above those indicated in the operational sections

of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

reliability.

Note:The HSB pin has IOUT=-10uA for VOH of 2.4V, this parameter is characterized but not tested.

Note:The INT is open-drain and does not source or sink high current when interrupt Register bit D3 is below.

DC Characteristics

(VCC = 2.7V-3.6V)

Symbol Parameter Commercial Industrial Units Notes

Min Max Min Max

ICC1Average VCC Current 65

50 70

55 mA

mA tAVAV = 25 ns

tAVAV = 45 ns

Dependent on output loading and cycle rate.

Values obtained without output loads.

ICC2Average VCC Current

during STORE 3 3 mA All Inputs Don’t Care, VCC = max

Average current for duration of STORE

cycle (tSTORE)

ICC3Average VCC Current

at tAVAV = 200ns

3V, 25°C, Typical

10 10 mA W ≥(VCC– 0.2V)

All Other Inputs Cycling at CMOS Levels

Dependent on output loading and cycle rate.

Values obtained without output loads.

ICC4Average VCAP

Current during

AutoStore™ Cycle

3 3 mA All Inputs Don’t Care

Average current for duration of STORE cycle

(tSTORE)

ISB VCC Standby Current

(Standby, Stable

CMOS Levels)

33mAE

≥ (VCC -0.2V)

All Others VIN≤ 0.2V or ≥(VCC-0.2V)

Standby current level after nonvolatile cycle

complete

IILK Input Leakage

Current ±1±1µAV

CC = max

VIN = VSS to VCC

IOLK Off-State Output

Leakage Current ±1±1µAV

CC = max

VIN = VSS to VCC, E or G ≥ VIH

VIH Input Logic “1”

Voltage 2.0 VCC + 0.5 2.0 VCC + 0.5 V All Inputs

VIL Input Logic “0”

Voltage VSS –0.5 0.8 VSS –0.5 0.8 V All Inputs

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STK17T88

Document Number: 001-52040 Rev. *A Page 4 of 22

AC Test Conditions

Input Pulse Levels....................................................0V to 3V

Input Rise and Fall Times...................................................≤ 5ns

Input and Output Timing Reference Levels....................1.5V

Output Load..................................See Figure 2 and Figure 3

Capacitance

Figure 2. AC Output Loading Figure 3. AC Output Loading for Tristate Specs (THZ, tLZ,

tWLQZ, tWHQZ, tGLQX, tGHQZ)

VOH Output Logic “1”

Voltage 2.4 2.4 V IOUT =–2 mA

VOL Output Logic “0”

Voltage 0.4 0.4 V IOUT = 4 mA

TAOperating Temper-

ature 0 70 –40 85 °C

VCC Operating Voltage 2.7 3.6 2.7 3.6 V 3.0V +20%, -10%

VCAP Storage Capacitance 17 57 17 57 µFBetweenV

CAP pin and VSS, 5V rated.

NVCNonvolatile STORE

operations 200 200 K

DATARData Retention 20 20 Years At 55°C

DC Characteristics (continued)

(VCC = 2.7V-3.6V)

Symbol Parameter Commercial Industrial Units Notes

Min Max Min Max

Symbol Parameter[2] Max Units Conditions

CIN Input Capacitance 7 pF ∆V = 0 to 3V

COUT Output Capacitance 7 pF ∆V = 0 to 3V

Note

2. These parameters are guaranteed but not tested.

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STK17T88

Document Number: 001-52040 Rev. *A Page 5 of 22

RTC DC Characteristics

Figure 4. RTC Component Configuration

Symbol Parameter Commercial Industrial Units Notes

Min Max Min Max

IBAK RTC Backup Current — 300 — 350 nA From either VRTCcap or VRTCbat

VRTCbat RTC Battery Pin

Voltage 1.8 3.3 1.8 3.3 V Typical = 3.0 Volts during normal operation

VRTCcap RTC Capacitor Pin

Voltage 1.2 2.7 1.2 2.7 V Typical = 2.4 Volts during normal operation

tOSCS RTCOscillatortimeto

start — 10 — 10 sec AtMinimumTemperaturefromPower upor

Enable

—5—5secAt25°C from Power up or Enable

Recommended Values

Y1 = 32.768 KHz

= 10M Ohm

= 0 (install cap footprint,

but leave unloaded)

= 56 pF ± 10% (do not vary from this value)

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STK17T88

Document Number: 001-52040 Rev. *A Page 6 of 22

SRAM READ Cycles #1 and #2

Figure 5. SRAM READ Cycle #1: Address Controlled[3,4,6]

Figure 6. SRAM READ Cycle #2: E and G Controlled[6]

Notes

3. W must be high during SRAM READ cycles.

4. Device is continuously selected with E and G both low

5. Measured ±200mV from steady state output voltage.

6. HSB must remain high during READ and WRITE cycles.

NO. Symbols Parameter STK17T88-25 STK17T88-45 Units

#1 #2 Alt. Min Max Min Max

ELQV tACS Chip Enable Access Time 25 45 ns

AVAV[3] tELEH[5] tRC Read Cycle Time 25 45 ns

AVQV[4] tAVQV[6] tAA Address Access Time 25 45 ns

GLQV tOE Output Enable to Data Valid 12 20 ns

AXQX[4] tAXQX tOH Output Hold after Address Change 3 3 ns

ELQX tLZ Address Change or Chip Enable to

Output Active 33ns

EHQZ tHZ Address Change or Chip Disable to

Output Inactive 10 15 ns

GLQX tOLZ Output Enable to Output Active 0 0 ns

GHQZ[5] tOHZ Output Disable to Output Inactive 10 15 ns

10 tELICCL[3] tPA Chip Enable to Power Active 0 0 ns

11 tEHICCH[3] tPS Chip Disable to Power Standby 25 45 ns

DATA VALID

tAXQX

tAVQV

DQ (DATA OUT)

ADDRESS

tAVAV

229

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STK17T88

Document Number: 001-52040 Rev. *A Page 7 of 22

SRAM WRITE Cycles #1 and #2

Figure 7. SRAM WRITE Cycle #1: W Controlled[7, 8]

Figure 8. SRAM WRITE Cycle #2: E Controlled[7, 8]

Notes

7. If W is low when E goes low, the outputs remain in the high-impedance state.

8. E or W must be ≥V

durin

address transitions.

NO. Symbols Parameter STK17T88-25 STK17T88-45 Units

#1 #2 Alt. Min Max Min Max

12 tAVAV tAVAV tWC Write Cycle Time 25 45 ns

13 tWLWH tWLEH tWP Write Pulse Width 20 30 ns

14 tELWH tELEH tCW Chip Enable to End of Write 20 30 ns

15 tDVWH tDVEH tDW Data Set-up to End of Write 10 15 ns

16 tWHDX tEHDX tDH Data Hold after End of Write 0 0 ns

17 tAVWH tAVEH tAW Address Set-up to End of Write 20 30 ns

18 tAVWL tAVEL tAS Address Set-up to Start of Write 0 0 ns

19 tWHAX tEHAX tWR Address Hold after End of Write 0 0 ns

20 tWLQZ tWZ Write Enable to Output Disable 10 15 ns

21 tWHQX tOW Output Active after End of Write 3 3 ns

PREVIOUS DATA

DATA OUT

ADDRESS

tAVAV

tWHDX

DATA IN

tWHAX

tWLWH

tAVWL

tAVWH

DATA VALID

tWLQZ

tDVWH

HIGH IMPEDANCE

tWHQX

tELWH

DATA IN

tAVAV

tEHDX

tWLEH

tEHAX

tAVEL

tAVEH

DATA VALID

tDVEH

HIGH IMPEDANCE

tELEH

DATA OUT

ADDRESS

DATA IN

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STK17T88

Document Number: 001-52040 Rev. *A Page 8 of 22

AutoStore/Power Up RECALL

Figure 9. AutoStore Power Up RECALL

Notes

9. tHRECALL starts from the time VCC rises above VSWITCH

10. If an SRAM WRITE has not taken place since the last nonvolatile cycle, no STORE will take place

11. Industrial Grade Devices require 15 ms Max.

NO. Symbols Parameter STK17T88 Units Notes

Standard Alternate Min Max

22 tHRECALL Power up RECALL Duration 40 ms 9

23 tSTORE tHLHZ STORE Cycle Duration 12.5 ms 10, 11

24 VSWITCH Low Voltage Trigger Level 2.65 V

25 VCCRISE VCC Rise Time 150 µS

NOTE: Read and Write cycles will be ignored during STORE, RECALL and while VCC is below VSWITCH

23 23

22 22

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STK17T88

Document Number: 001-52040 Rev. *A Page 9 of 22

Figure 10. Software Store/Recall Cycle: ECONTROLLED[13]

Software-Controlled STORE/RECALL Cycle

In the following table, the software controlled STORE and RECALL cycle parameters are listed. [12, 13]

NO. Symbols Parameter STK17T88-35 STK17T88-45 Units Notes

ECont Alternate Min Max Min Max

26 tAVAV tRC STORE / RECALL Initiation Cycle Time 25 45 ns 13

27 tAVEL tAS Address Set-up Time 0 0 ns

28 tELEH tCW Clock Pulse Width 20 30 ns

29 tEHAX Address Hold Time 1 1 ns

30 tRECALL RECALL Duration 100 100 ms

26 26

27 28

23 30

Notes

12.The software sequence is clocked on the falling edge of E controlled READs

13.Thesixconsecutiveaddresses must be read in the order listed intheSoftwareSTORE/RECALLModeSelectionTable.Wmustbehighduringallsix consecutive cycles.

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STK17T88

Document Number: 001-52040 Rev. *A Page 10 of 22

Hardware STORE Cycle

Figure 11. Hardware STORE Cycle

Soft Sequence Commands

Figure 12. Soft Sequence Command

NO. Symbols Parameter STK17T88 Units Notes

Standard Alternate Min Max

31 tDELAY tHLQZ Hardware STORE to SRAM Disabled 1 70 µs14

32 tHLHX Hardware STORE Pulse Width 15 ns

NO. Symbols Parameter STK17T88 Units Notes

Standard Min Max

33 tSS Soft Sequence Processing Time 70 µs 15, 16

33 33

Notes

14.On a hardware STORE initiation, SRAM operation continues to be enabled for time tDELAY to allow read/write cycles to complete

15.This is the amount of time that it takes to take action on a soft sequence command. Vcc power must remain high to effectively register command.

16.Commands like Store and Recall lock out I/O until operation is complete which further increases this time. See specific command

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