Cypress Semiconductor STK11C88 Manual de usuario

STK11C88

256 Kbit (32K x 8) SoftStore nvSRAM

Cypress Semiconductor Corporation • 198 Champion Court • San Jose

CA 95134-1709 • 408-943-2600

Document Number: 001-50591 Rev. ** Revised January 29, 2009

Features

■

25 ns and 45 ns access times

■

Pin compatible with industry standard SRAMs

■

Software initiated STORE and RECALL

■

Automatic RECALL to SRAM on power up

■

Unlimited Read and Write endurance

■

Unlimited RECALL cycles

■

1,000,000 STORE cycles

■

100 year data retention

■

Single 5V+10% power supply

■

Commercial and Industrial Temperatures

■

28-pin (300 mil and 330 mil) SOIC packages

■

RoHS compliance

Functional Description

The Cypress STK11C88 is a 256 Kb fast static RAM with a

nonvolatile element in each memory cell. The embedded

nonvolatile elements incorporate QuantumTrap

™

technology

producing the world’s most reliable nonvolatile memory. The

SRAM provides unlimited read and write cycles, while

independent, nonvolatile data resides in the highly reliable

QuantumTrap cell. Data transfers under Software control from

SRAM to the nonvolatile elements (the STORE operation). On

power up, data is automatically restored to the SRAM (the

RECALL operation) from the nonvolatile memory. RECALL

operations are also available under software control.

Logic Block Diagram

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STK11C88

Document Number: 001-50591 Rev. ** Page 2 of 15

Pin Configurations

Figure 1. Pin Diagram - 28-Pin SOIC

Table 1. Pin Definitions - 28-Pin SOIC

Pin Name Alt IO Type Description

–A

Input Address Inputs. Used to select one of the 32,768 bytes of the nvSRAM.

-DQ

Input or

Output Bidirectional Data IO lines. Used as input or output lines depending on operation.

WE WInput Write Enable Input, Active LOW. When the chip is enabled and WE is LOW, data on the

IO pins is written to the specific address location.

CE EInput Chip Enable Input, Active LOW. When LOW, selects the chip. When HIGH, deselects the

chip.

OE GInput Output Enable, Active LOW. The active LOW OE input enables the data output buffers

during read cycles. Deasserting OE HIGH causes the IO pins to tri-state.

Ground Ground for the Device.The device is connected to the ground of the system.

Power Supply Power Supply Inputs to the Device.

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STK11C88

Document Number: 001-50591 Rev. ** Page 3 of 15

Device Operation

The STK11C88 is a versatile memory chip that provides several

modes of operation. The STK11C88 can operate as a standard

32K x 8 SRAM. A 32K x 8 array of nonvolatile storage elements

shadow the SRAM. SRAM data can be copied from nonvolatile

memory or nonvolatile data can be recalled to the SRAM.

SRAM Read

The STK11C88 performs a READ cycle whenever CE and OE

are LOW, while WE is HIGH. The address specified on pins

0–14

determines the 32,768 data bytes accessed. When the

READ is initiated by an address transition, the outputs are valid

after a delay of t

(READ cycle 1). If the READ is initiated by

CE or OE, the outputs are valid at t

ACE

or at t

DOE

, whichever is

later (READ cycle 2). The data outputs repeatedly respond to

address changes within the t

access time without the need for

transitions on any control input pins, and remain valid until

another address change or until CE or OE is brought HIGH.

SRAM Write

A WRITE cycle is performed whenever CE and WE are LOW.

The address inputs must be stable prior to entering the WRITE

cycle and must remain stable until either CE or WE goes HIGH

at the end of the cycle. The data on the common IO pins DQ

0–7

are written into the memory if it has valid t

, before the end of

a WE controlled WRITE or before the end of an CE controlled

WRITE. Keep OE HIGH during the entire WRITE cycle to avoid

data bus contention on common IO lines. If OE is left LOW,

internal circuitry turns off the output buffers t

HZWE

after WE goes

LOW.

Software STORE

Data is transferred from the SRAM to the nonvolatile memory by

a software address sequence. The STK11C88 software STORE

cycle is initiated by executing sequential CE controlled READ

cycles from six specific address locations in exact order. During

the STORE cycle, an erase of the previous nonvolatile data is

first performed, followed by a program of the nonvolatile

elements. When a STORE cycle is initiated, input and output are

disabled until the cycle is completed.

Because a sequence of READs from specific addresses is used

forSTOREinitiation,it is importantthatno otherREADor WRITE

accesses intervene in the sequence. If they intervene, the

sequence is aborted and no STORE or RECALL takes place.

To initiate the software STORE cycle, the following READ

sequence is performed:

1. Read address 0x0E38, Valid READ

2. Read address 0x31C7, Valid READ

3. Read address 0x03E0, Valid READ

4. Read address 0x3C1F, Valid READ

5. Read address 0x303F, Valid READ

6. Read address 0x0FC0, Initiate STORE cycle

The software sequence is clocked with CE controlled READs.

When the sixth address in the sequence is entered, the STORE

cycle commences and the chip is disabled. It is important that

READ cycles and not WRITE cycles are used in the sequence.

It is not necessary that OE is LOW for a valid sequence. Afterthe

STORE

cycle time is fulfilled, the SRAM is again activated for

READ and WRITE operation.

Software RECALL

Data is transferred from the nonvolatile memory to the SRAM by

a software address sequence. A software RECALL cycle is

initiatedwith a sequenceof READoperations ina mannersimilar

to the software STORE initiation. To initiate the RECALL cycle,

the following sequence of CE controlled READ operations is

performed:

1. Read address 0x0E38, Valid READ

2. Read address 0x31C7, Valid READ

3. Read address 0x03E0, Valid READ

4. Read address 0x3C1F, Valid READ

5. Read address 0x303F, Valid READ

6. Read address 0x0C63, Initiate RECALL cycle

Internally, RECALL isatwo step procedure.First, theSRAMdata

is cleared, and then the nonvolatile information is transferredinto

the SRAM cells. After the t

RECALL

cycle time, the SRAM is once

again ready for READ and WRITE operations. The RECALL

operation does not alter the data in the nonvolatile elements. The

nonvolatile data can be recalled an unlimited number of times.

Hardware RECALL (Power Up)

During power up or after any low power condition (V

RESET

an internal RECALL request is latched. When V

once again

exceeds the sense voltage of V

SWITCH

, a RECALL cycle is

automatically initiated and takes t

HRECALL

to complete.

If the STK11C88 is in a WRITE

state at the end of power up

RECALL, the SRAM

data is corrupted. To help avoid this

situation, a 10 Kohm resistor is connected either between WE

and system V

or between CE and system V

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STK11C88

Document Number: 001-50591 Rev. ** Page 4 of 15

Hardware Protect

The STK11C88 offers hardware protection against inadvertent

STORE operation and SRAM WRITEs during low voltage

conditions. When V

SWITCH

, all externally initiated

STORE operations and SRAM WRITEs are inhibited.

Noise Considerations

The STK11C88 is a high speed memory. It must have a high

frequency bypass capacitor of approximately 0.1 µF

connected between V

and V

SS,

using leads and traces that

are as short as possible. As with all high speed CMOS ICs,

careful routing of power, ground, and signals help prevent

noise problems.

Low Average Active Power

CMOS technology provides the STK11C88 the benefit of

drawing significantly less current when it is cycled at times

longer than 50 ns. Figure 2 and Figure 3 show the relationship

between I

and READ or WRITE cycle time. Worst case

current consumption is shown for both CMOS and TTL input

levels (commercial temperature range, VCC = 5.5V, 100

percent duty cycle on chip enable). Only standby current is

drawn when the chip is disabled. The overall average current

drawn by the STK11C88 depends on the following items:

1. The duty cycle of chip enable

2. The overall cycle rate for accesses

3. The ratio of READs to WRITEs

4. CMOS versus TTL input levels

5. The operating temperature

6. The V

level

7. IO loading

Best Practices

nvSRAM products have been used effectively for over 15

years. While ease-of-use is one of the product’s main system

values, the experience gained working with hundreds of appli-

cations has resulted in the following suggestions as best

practices:

■

The nonvolatile cells in a nvSRAM are programmed on the

test floor during final test and quality assurance. Incoming

inspection routines at customer or contract manufacturer’s

sites,sometimes,reprogramthesevalues.Final NV patterns

are typically repeating patterns of AA, 55, 00, FF, A5, or 5A.

The end product’s firmware should not assume that a NV

array is in a set programmed state. Routines that check

memorycontentvaluestodeterminefirsttimesystemconfig-

urationandcoldorwarmbootstatus,shouldalwaysprogram

a unique NV pattern (for example, a complex 4-byte pattern

of 46 E6 49 53 hex or more random bytes) as part of the final

system manufacturing test to ensure these system routines

work consistently.

■

PowerupbootfirmwareroutinesshouldrewritethenvSRAM

into the desired state. While the nvSRAM is shipped in a

preset state, best practice is to again rewrite the nvSRAM

into the desired state as a safeguard against events that

might flip the bit inadvertently (program bugs or incoming

inspection routines).

Figure 2. Icc (max) Reads

Figure 3. Icc (max) Writes

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STK11C88

Document Number: 001-50591 Rev. ** Page 5 of 15

Table 2. Software STORE/RECALL Mode Selection

CE WE A

– A

Mode IO Notes

L H 0x0E38

0x31C7

0x03E0

0x3C1F

0x303F

0x0FC0

Read SRAM

Nonvolatile STORE

Output Data

[1, 2]

L H 0x0E38

0x31C7

0x03E0

0x3C1F

0x303F

0x0C63

Read SRAM

Nonvolatile RECALL

Output Data

[1, 2]

Notes

1. The six consecutive addresses must be in the order listed. WE must be high during all six consecutive CE controlled cycles to enable a nonvolatile cycle.

2. While there are 15 addresses on the STK11C88, only the lower 14 are used to control software modes.

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STK11C88

Document Number: 001-50591 Rev. ** Page 6 of 15

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the

device. These user guidelines are not tested.

Storage Temperature .................................–65°C to +150°C

Temperature under bias..............................–55°C to +125°C

Supply Voltage on V

Relative to GND..........–0.5V to 7.0V

Voltage on Input Relative to Vss............–0.6V to V

+ 0.5V

Voltage on DQ

0-7

...................................–0.5V to Vcc + 0.5V

Power Dissipation .........................................................1.0W

DC Output Current (1 output at a time, 1s duration)....15 mA

Operating Range

Range Ambient Temperature V

Commercial 0°C to +70°C 4.5V to 5.5V

Industrial -40°C to +85°C 4.5V to 5.5V

DC Electrical Characteristics

Over the operating range (V

= 4.5V to 5.5V)

Parameter Description Test Conditions Min Max Unit

CC1

Average V

Current t

= 25 ns

= 45 ns

Dependent on output loading and cycle rate.

Values obtained without output loads.

OUT

= 0 mA.

Commercial 97

70 mA

Industrial 100

70 mA

CC2

Average V

Current

during STORE All Inputs Do Not Care, V

= Max

Average current for duration t

STORE

3mA

CC3

Average V

Current

at t

= 200 ns, 5V,

25°C Typical

WE > (V

– 0.2V). All other inputs cycling.

Dependent on output loading and cycle rate. Values obtained

without output loads.

10 mA

SB1[3]

Average V

Current

(Standby, Cycling

TTL Input Levels)

=25ns, CE > V

=45ns, CE > V

Commercial 30

22 mA

Industrial 31

23 mA

SB2[3]

Standby Current

(Standby, Stable

CMOS Input Levels)

CE > (V

– 0.2V). All others V

<0.2V or > (V

– 0.2V). 750 μA

Input Leakage

Current V

= Max, V

< V

-1 +1 μA

Off State Output

Leakage Current V

= Max, V

< V

, CE or OE > V

or WE < V

-5 +5 μA

Input HIGH Voltage 2.2 V

0.5 V

Input LOW Voltage V

–

0.5 0.8 V

Output HIGH Voltage I

OUT

= –4 mA 2.4 V

Output LOW Voltage I

OUT

= 8 mA 0.4 V

Data Retention and Endurance

Parameter Description Min Unit

DATA

Data Retention 100 Years

Nonvolatile STORE Operations 1,000 K

Note

3. CE > V

will not produce standby current levels until any nonvolatile cycle in progress has timed out.

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STK11C88

Document Number: 001-50591 Rev. ** Page 7 of 15

Capacitance

In the following table, the capacitance parameters are listed.

[4]

Parameter Description Test Conditions Max Unit

Input Capacitance T

= 25°C, f = 1 MHz,

= 0 to 3.0 V 5pF

OUT

Output Capacitance 7 pF

Thermal Resistance

In the following table, the thermal resistance parameters are listed.

[4]

Parameter Description Test Conditions 28-SOIC

(300 mil) 28-SOIC

(330 mil) Unit

Thermal Resistance

(Junction to Ambient) Test conditions follow standard test methods and

procedures for measuring thermal impedance,

per EIA / JESD51.

TBD TBD °C/W

Thermal Resistance

(Junction to Case) TBD TBD °C/W

Figure 4. AC Test Loads

AC Test Conditions

5.0V

Output

30 pF

R1 480Ω

255Ω

Input Pulse Levels..................................................0 V to 3 V

Input Rise and Fall Times (10% - 90%)........................ <5 ns

Input and Output Timing Reference Levels................... 1.5 V

Note

4. These parameters are guaranteed by design and are not tested.

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STK11C88

Document Number: 001-50591 Rev. ** Page 8 of 15

AC Switching Characteristics

SRAM Read Cycle

Parameter Description 25 ns 45 ns Unit

Min Max Min Max

Cypress

Parameter Alt

ACE

ELQV

Chip Enable Access Time 25 45 ns

RC [5]

AVAV,

ELEH

Read Cycle Time 25 45 ns

AA [6]

AVQV

Address Access Time 25 45 ns

DOE

GLQV

Output Enable to Data Valid 10 20 ns

OHA [6]

AXQX

Output Hold After Address Change 5 5 ns

LZCE [7]

ELQX

Chip Enable to Output Active 5 5 ns

HZCE [7]

EHQZ

Chip Disable to Output Inactive 10 15 ns

LZOE [7]

GLQX

Output Enable to Output Active 0 0 ns

HZOE [7]

GHQZ

Output Disable to Output Inactive 10 15 ns

PU [4]

ELICCH

Chip Enable to Power Active 0 0 ns

PD [4]

EHICCL

Chip Disable to Power Standby 25 45 ns

Switching Waveforms

Figure 5. SRAM Read Cycle 1: Address Controlled

[5, 6]

Figure 6. SRAM Read Cycle 2: CE and OE Controlled

[5]

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Notes

5. WE must be HIGH during SRAM Read Cycles and LOW during SRAM WRITE cycles.

6. I/O state assumes CE and OE < V

and WE > V

; device is continuously selected.

7. Measured ±200 mV from steady state output voltage.

[+] Feedback

STK11C88

Document Number: 001-50591 Rev. ** Page 9 of 15

SRAM Write Cycle

Parameter Description 25 ns 45 ns Unit

Min Max Min Max

Cypress

Parameter Alt

AVAV

Write Cycle Time 25 45 ns

PWE

WLWH,

WLEH

Write Pulse Width 20 30 ns

SCE

ELWH,

ELEH

Chip Enable To End of Write 20 30 ns

DVWH,

DVEH

Data Setup to End of Write 10 15 ns

WHDX,

EHDX

Data Hold After End of Write 0 0 ns

AVWH,

AVEH

Address Setup to End of Write 20 30 ns

AVWL,

AVEL

Address Setup to Start of Write 0 0 ns

WHAX,

EHAX

Address Hold After End of Write 0 0 ns

HZWE [7,8]

WLQZ

Write Enable to Output Disable 10 15 ns

LZWE [7]

WHQX

Output Active After End of Write 5 5 ns

Switching Waveforms

Figure 7. SRAM Write Cycle 1: WE Controlled

[9]

Figure 8. SRAM Write Cycle 2: CE Controlled

[9]

SCE

PWE

HZWE

LZWE

ADDRESS

DATA IN

DATA OUT

DATA VALID

HIGH IMPEDANCE

PREVIOUS DATA

ADDRESS

SCE

PWE

DATA IN

DATA OUT

HIGH IMPEDANCE

DATA VALID

Notes

8. If WE is Low when CE goes Low, the outputs remain in the high impedance state.

9. CE or WE must be greater than V

during address transitions.

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STK11C88

Document Number: 001-50591 Rev. ** Page 10 of 15

STORE INHIBIT or Power Up RECALL

Parameter Alt Description STK11C88 Unit

Min Max

HRECALL [10]

RESTORE

Power up RECALL Duration 550 μs

STORE [6]

HLHZ

STORE Cycle Duration 10 ms

RESET

Low Voltage Reset Level 3.6 V

SWITCH

Low Voltage Trigger Level 4.0 4.5 V

Switching Waveforms

Figure 9. STORE INHIBIT/Power Up RECALL

SWITCH

RESET

POWER-UP RECALL

DQ (DATA OUT)

STORE INHIBIT

tHRECALL

POWER-UP

RECALL

BROWN OUT

STORE INHIBIT

NO RECALL

(VCC DID NOT GO

BELOW VRESET)

BROWN OUT

STORE INHIBIT

NO RECALL

(VCC DID NOT GO

BELOW VRESET)

BROWN OUT

STORE INHIBIT

RECALL WHEN

VCC RETURNS

ABOVE VSWITCH

Notes

10.t

HRECALL

starts from the time V

rises above V

SWITCH

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