NXP Semiconductors UM11620 Manual de usuario

UM11620

FRDMGD3160XM3EVM half-bridge evaluation board

Rev. 1 — 10 June 2021 User guide

Document information

Information Content

Keywords gate driver, half-bridge, evaluation board, XM3, GD3160

Abstract The FRDMGD3160XM3EVM is a functional power module half-bridge kit.

This kit can be used as a foundation on which to develop and analyze the

GD3160 gate driver for ASIL D compliant high voltage, high-power traction

motor inverter for electric vehicle applications. This manual is a guide for

describing the various features in using the kit.

NXP Semiconductors UM11620

FRDMGD3160XM3EVM half-bridge evaluation board

Revision Date Description

1 20210610 initial version

Revision history

User guide Rev. 1 — 10 June 2021

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NXP Semiconductors UM11620

FRDMGD3160XM3EVM half-bridge evaluation board

1 Important notice

NXP provides the enclosed product(s) under the following conditions:

This evaluation kit is intended for use of ENGINEERING DEVELOPMENT OR

EVALUATION PURPOSES ONLY. It is provided as a sample IC pre-soldered to a printed

circuit board to make it easier to access inputs, outputs, and supply terminals. This

evaluation board may be used with any development system or other source of I/O

signals by simply connecting it to the host MCU or computer board via off-the-shelf

cables. This evaluation board is not a Reference Design and is not intended to represent

a final design recommendation for any particular application. Final device in an

application will be heavily dependent on proper printed circuit board layout and heat

sinking design as well as attention to supply filtering, transient suppression, and I/O

signal quality.

The goods provided may not be complete in terms of required design, marketing, and

or manufacturing related protective considerations, including product safety measures

typically found in the end product incorporating the goods. Due to the open construction

of the product, it is the user's responsibility to take any and all appropriate precautions

with regard to electrostatic discharge. In order to minimize risks associated with the

customers applications, adequate design and operating safeguards must be provided

by the customer to minimize inherent or procedural hazards. For any safety concerns,

contact NXP sales and technical support services.

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NXP Semiconductors UM11620

FRDMGD3160XM3EVM half-bridge evaluation board

2 FRDMGD3160XM3EVM

Figure 1. FRDMGD3160XM3EVM

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NXP Semiconductors UM11620

FRDMGD3160XM3EVM half-bridge evaluation board

3 Getting started

The NXP analog product development boards provide an easy-to-use platform for

evaluating NXP products. The boards support a range of analog, mixed-signal, and

power solutions. They incorporate monolithic integrated circuits and system-in-package

devices that use proven high-volume technology. NXP products offer longer battery life, a

smaller form factor, reduced component counts, lower cost, and improved performance in

powering state-of-the-art systems.

The tool summary page for FRDMGD3160XM3EVM is at http://www.nxp.com/

FRDMGD3160XM3EVM. The overview tab provides an overview of the device, product

features, a description of the kit contents, a list of (and links to) supported devices, a list

of (and links to) any related products, and a Get Started section.

The Get Started section provides links to everything needed to start using the

device and contains the most relevant, current information applicable to the

FRDMGD3160XM3EVM.

1. Go to http://www.nxp.com/FRDMGD3160XM3EVM.

2. On the Overview tab, locate the Jump To navigation feature on the left side of the

window.

3. Select the Get Started link, review each entry, and download an entry by clicking the

title.

4. After reviewing the Overview tab, visit the other product-related tabs for additional

information:

• Documentation: download current documentation

• Software & Tools: download current hardware and software tools

• Buy/Parametrics: purchase the product and view the product parametrics

After downloading files, review each file, including the user guide, which includes setup

instructions. If applicable, the bill of materials (BOM) and supporting schematics are also

available for download in the Get Started section of the Overview tab.

3.1 Kit contents/packing list

The FRDMGD3160XM3EVM kit contents include:

•Assembled and tested FRDMGD3160XM3EVM board in an anti-static bag

•3.3 V to 5.0 V translator board (KITGD3160TREVB) connected to FRDM-KL25Z

•USB cable, type A male/type mini B male, 3 ft

•Quick start guide

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NXP Semiconductors UM11620

FRDMGD3160XM3EVM half-bridge evaluation board

3.2 Required equipment

To use this kit, you need:

•Compatible XM3 SiC MOSFET module (CAB450M12XM3)

•DC link capacitor compatible with the XM3 module

•30 µH to 50 µH, high current air core inductor for double pulse testing

•HV power supply with protection shield and hearing protection

•25 V, 1.0 A DC power supply

•500 MHz 2.5 GS/s 4-channel oscilloscope

•Rogowski current probe or shunt resistor for measuring source current

•Isolated high-voltage and low-voltage differential probes

•Digital voltmeter

3.3 System requirements

The kit requires the following to function properly with the software:

•Windows 8 or higher operating system

4 Getting to know the hardware

4.1 Overview

The FRDMGD3160XM3EVM is a half-bridge evaluation kit populated with two GD3160

single channel gate drive devices. The kit includes the Freedom KL25Z microcontroller

hardware for interfacing a PC installed with FlexGUI software for communication to the

serial peripheral interface (SPI) registers on the GD3160 gate drive devices in either

daisy chain or standalone configuration.

The KITGD3160TREVB translator board is used to translate 3.3 V signals to 5.0 V

signals between the MCU and GD3160 gate drivers. The evaluation kit can be connected

to a compatible insulated gate bipolar transistor (IGBT) or SiC module for half-bridge

evaluations and applications development.

4.2 Board features

•Capability to connect to CAB450M12XM3 form factor module for half-bridge

evaluations

•Negative VEE gate low drive level (−3.7 V DC)

•VCCREG regulated high gate drive level (+15 V to +21 V DC programmable)

•Jumper configurable for disabling dead time fault protection when short-circuit testing

•Easy access power, ground, and signal test points

•Easy to install and use FlexGUI for interfacing via SPI through PC; software includes

double pulse and short-circuit testing capability

•DC link bus voltage monitor on low-side driver via AMUXIN and AOUT

•Negative temperature coefficient (NTC) connection and configurable for monitoring

module temperature

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NXP Semiconductors UM11620

FRDMGD3160XM3EVM half-bridge evaluation board

4.3 Device features

Device Description Features

GD3160 The GD3160 is an

advanced single

channel gate driver for

IGBT and SiC.

•Compatible with current sense and temp sense

IGBTs

•DESAT detection capability for detecting VCE

desaturation condition

•Fast short-circuit protection for IGBTs with current

sense feedback

•Compliant with automotive safety integrity level

(ASIL) C/D ISO 26262 functional safety requirements

•SPI interface for safety monitoring, programmability,

and flexibility

•Integrated galvanic signal isolation

•Integrated gate drive power stage capable of 15 A

peak source and sink

•Interrupt pin for fast response to faults

•Compatible with negative gate supply

•Compatible with 200 V to 1700 V IGBT and SiC

MOSFET, power range > 125 kW

Table 1. Device features

4.4 Board description

The FRDMGD3160XM3EVM is a half-bridge evaluation board populated with two

GD3160 single channel IGBT or SiC gate drive devices. The board supports connection

to an FRDM-KL25Z microcontroller for SPI communication configuration programming

and monitoring. The board includes DESAT circuitry for short-circuit detection and

implementation of GD3160 shutdown protection capabilities.

The evaluation board is designed to connect to an XM3 module for evaluation of the

GD3160 performance and capabilities.

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NXP Semiconductors UM11620

FRDMGD3160XM3EVM half-bridge evaluation board

Figure 2. Connecting FRDM-KL25Z, GD31xx half-bridge EVB and translator board

4.4.1 Low-voltage logic and control connector

Low-voltage domain is 15 V VSUP domain that interfaces with the MCU and GD3160

control registers through the 24-pin connector interface.

Low-side driver and high-side driver domains are driver control interfaces to XM3 SiC

module single phase connections and test points.

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NXP Semiconductors UM11620

FRDMGD3160XM3EVM half-bridge evaluation board

Figure 3. Evaluation board voltage and interface domains

Pin Name Function

1 AOUTL analog output duty cycle encoded signal (low side) for reading temperature via

TSENSEA or voltage via AMUXIN

2 n.c. not connected

3 CSBL chip select bar (low side)

4 n.c. not connected

5 PWML pulse width modulation (PWM) input (low side)

6 INTBL interrupt bar (low side)

7 MOSIL master out slave in (low side)

8 SCLK serial clock input

9 MISOL master in slave out (low side)

10 EN_PS MCU control of flyback power supply

11 FSSTATEL fail-safe state (low side)

12 GND ground

13 FSENB fail-safe enable (high side and low side)

14 MISOH master in slave out (high side)

Table 2. Low-voltage domain 24-pin connector definitions

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NXP Semiconductors UM11620

FRDMGD3160XM3EVM half-bridge evaluation board

Pin Name Function

15 INTAL fault reporting and real time VCE and VGE monitoring (low side)

16 MOSIH master out slave in (high side)

17 INTAH fault reporting and real time VCE and VGE monitoring (high side)

18 CSBH chip select bar (high side)

19 LED_PWR USB 3.3 V power for INTB LEDs (high side and low side)

20 AOUTH duty cycle encoded signal (high side)

21 PWMH PWM input (high side)

22 FSSTATEH fail-safe state (high side)

23 GND ground

24 INTBH interrupt bar (high side)

Table 2. Low-voltage domain 24-pin connector definitions...continued

4.4.2 Test point definitions

All test points are clearly marked on the evaluation board. Figure 4 shows the location of

various test points.

Figure 4. Key test point locations

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