Texas Instruments LMG2100 Manual de usuario
EVM User's Guide: LMG2100 LMG2100EVM
LMG2100EVM-078 Evaluation Module
Description
The LMG2100 evaluation module is a compact, easy-
to-use power stage with an external PWM signal.
The board can be configured as a buck converter,
boost converter, or other converter topology using
a half bridge. Because this is an open-loop board
with an external PWM signal, do not use to evaluate
transient response. The device can be used to
evaluate the performance of the LMG2100 as a
hard-switched converter to sample measurements
such as efficiency, switching speed and dv/dt (slew
rate). The EVM features a LMG2100 half-bridge
power module with two 100 V, 4.4-mΩ GaN FETs
driven by 80-V GaN FET half-bridge gate driver. The
module can deliver up to 20 A of current if the
application includes adequate thermal management
(monitor case temperature and verify adequate airflow
is present if required). The thermal management
considerations include forced air, heat sink, and lower
operating frequency to minimize the power dissipation
in the module.
Features
• Input voltage operates up to 80 V DC
• Integrated 100-V, 4.4-mΩ GaN FETs with driver
• Open loop control with single or dual PWM signals
• Single-input, onboard for PWM signal with 8-ns
dead time
• Configurable onboard dead-time adjustment by
simple resistance change
• Onboard LDO for generating 5-V VCC supply from
an unregulated supply between 5.5 V and 10 V
• Kelvin sense capability for efficiency
measurements for input and output voltage
• Slew rate adjustment using series resistors along
with Cboot and Cvcc
Applications
• High-speed synchronous buck/boost converters
•Solar power optimizer, Micro-inverter
•Class D amplifiers for audio
• 48-V point-of-load converters for industrial
•Motor drives
•Power tools
•Telecom and server power
LMG2100EVM-078 Evaluation Module with Heat Sink
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LMG2100EVM-078 Evaluation Module 1
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1 Evaluation Module Overview
1.1 Introduction
The LMG2100 device is an 100-V Gallium Nitride (GaN) half-bridge power module with an integrated driver. The
device provides an integrated power stage using enhancement-mode GaN FETs. The LMG2100 device consists
of two GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. The guide shows
a circuit and the list of materials describing how to power the board up and how to set the board up for a
certain regulation voltage. The EVM board is designed to accelerate the evaluation of the LMG2100. This board
is not intended to be used as a standalone product, but is intended to evaluate the switching performance of
LMG2100.
This evaluation module can be configured to either buck or boost mode by providing external gate signals.
External heat sink is used to test this module up to 500W. External supply voltage (5.5 V to 10 V) is required to
power the LMG2100 and dead time generation circuit.
1.2 Kit Contents
The kit contains the following:
• Safety instructions
• LMG2100EVM-078 Circuit Board
1.3 Specification
Parameter Specifications
Vin: Input voltage 0 V to 80 V
Vout: Output voltage 0 V to 80 V
Vcc: Input supply voltage 5.5 V to 10 V
Maximum power 500W
Switching frequency 100 kHz to 500 kHz
Board dimensions 61 mm x 68 mm x 15 mm
1.4 Device Information
The LMG2100 device is an 80-V continuous, 100-V pulsed, 35-A half-bridge power stage, with integrated gate-
driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100-V GaN FETs driven
by one high-frequency 80-V GaN FET driver in a half-bridge configuration. The device extends advantages of
discrete GaN FETs by offering a more user-friendly interface. This offers an excellent choice for high-frequency,
high power density, and efficient power conversion.
The LMG2100 is available in a 5.5 mm x 4.5 mm x 0.89 mm lead-free QFN package with exposed die on the
top side for cooling. Power pins of the device are optimized to accommodate easy PCB layout to achieve smaller
power loop. The device supports 3.3-V, 5-V and 12-V input logic levels for the gate signals.
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2 Hardware
General Texas Instruments High Voltage Evaluation (TI HV EVM) User Safety Guidelines
WARNING
Always follow TI's set-up and application instructions, including use of all interface components within their
recommended electrical rated voltage and power limits. Always use electrical safety precautions to help ensure
your personal safety and those working around you. Contact TI's Product Information Center http://ti.com/
customer support for further information.
Save all warnings and instructions for future reference.
WARNING
Failure to follow warnings and instructions can result in personal injury, property damage or death
due to electrical shock and burn hazards.
The term TI HV EVM refers to an electronic device typically provided as an open framed, unenclosed printed
circuit board assembly. It is intended strictly for use in development laboratory environments, solely for qualified
professional users having training, expertise and knowledge of electrical safety risks in development and
application of high voltage electrical circuits. Any other use and/or application are strictly prohibited by Texas
Instruments. If you are not suitably qualified, then immediately stop from further use of the HV EVM.
1. Work Area Safety:
a. Keep work area clean and orderly.
b. Qualified observers must be present anytime circuits are energized.
c. Effective barriers and signage must be present in the area where the TI HV EVM and the interface
electronics are energized, indicating operation of accessible high voltages can be present, for the
purpose of protecting inadvertent access.
d. All interface circuits, power supplies, evaluation modules, instruments, meters, scopes, and other related
apparatus used in a development environment exceeding 50Vrms/75VDC must be electrically located
within a protected Emergency Power Off EPO protected power strip.
e. Use stable and non-conductive work surface.
f. Use adequately insulated clamps and wires to attach measurement probes and instruments. No
freehand testing whenever possible.
2. Electrical Safety:
a. As a precautionary measure, a good engineering practice is to assume that the entire EVM has fully
accessible and active high voltages.
b. De-energize the TI HV EVM and all the inputs, outputs and electrical loads before performing any
electrical or other diagnostic measurements. Revalidate that TI HV EVM power has been safely de-
energized.
c. With the EVM confirmed de-energized, proceed with required electrical circuit configurations, wiring,
measurement equipment hook-ups and other application needs, while still assuming the EVM circuit and
measuring instruments are electrically live.
d. Once EVM readiness is complete, energize the EVM as intended.
WARNING
While the EVM is energized, never touch the EVM or the electrical circuits, as the ciruits can
be at high voltages capable of causing electrical shock hazard.
3. Personal Safety
a. Wear personal protective equipment e.g. latex gloves or safety glasses with side shields or protect EVM
in an adequate lucent plastic box with interlocks from accidental touch.
Limitation for safe use:
EVMs are not to be used as all or part of a production unit.
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2.1 Test Points
Table 2-1. Test Point Functional Description
TEST POINT DESCRIPTION
TP1 Sense connection for the input supply
TP2 Sense connection for output voltage
TP3 Sense connection for output ground
TP4 Analog Ground sense connection
TP6 5-V sense connection for LDO output
TP7 Sense connection for the input supply ground
J12 SW node, designed for use with oscilloscope probe and spring-type ground connection for better
measurements
J1 VIN power connector (80-V DC maximum)
J2 VOUT power connector (80-V DC maximum)
J3 EXTVCC connection (5.5 V – 10 V)
2.1.1 Key Connections
The following test procedure is recommended primarily for powering up and shutting down the evaluation
module. Never leave a powered EVM unattended for any length of time. Also, the unit must never be handled
while power is applied.
WARNING
There are high voltages present on the EVM. Some components reach temperatures above 50°C.
Precautions must be taken when handling the board.
2.1.1.1 Connect a Supply to J3 Connector
There is the bias supply EXTVCC (between 5.5 V and 10 V) for the LMG2100 driver. This driver supply is
regulated to 5 V by the series LDO U2 (LP3869). This regulation verifies that the bias supply for the LMG2100 is
accurate and is not exceeded beyond the gate voltage specifications. This user's guide refers to this supply as
the driver bias supply.
2.1.1.2 PWM Input
Provide the PWM input using a function generator that is capable of providing the desired switching frequency
and duty cycle. This function generator output (0-5V signal) must be connected to the J5 connector as shown in
the Figure 2-1. The left-most pin (pin 4) in this view is the positive input of the PWM supply and the remaining
three pins are connected to GND in the default assembly for the board. The combination of R14-C22 and
R2-C35 generates 8 ns to 10 ns of dead time.
Alternatively, two separate PWM inputs can be applied to control HI and LI independently. To apply this type of
control, R11 must be removed, R13 must be populated with a 0-Ω resistor, and R12 must be replaced with a
10-kΩ resistor. On a board with these modifications, the HI signal must be applied at pin 4 of J5, and the LI
signal at pin 2 of J5. Note that with this control scheme, the EVM no longer generates a dead time separating
HI and LI transitions. Therefore, careful consideration must be applied to the control signals in this mode of
operation to prevent a shoot-through condition. TI recommends to provide at least 8 ns of dead time through the
external PWM signals.
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Figure 2-1. PWM Connection on J5
2.1.1.3 J1 Connector: Power Supply
Connect the input voltage to the J1 connector and verify that the positive and negative supply is connected
appropriately. The positive and negative terminals are marked on the board. The sense connection for the input
supply is through the TP1 and TP7 test points, respectively. This is useful when doing efficiency calculations as
this verifies that the resistive losses to the board are taken into account and the losses calculated are related to
the board and the LMG2100 half bridge.
The output load is connected to the J2 connector. The positive and negative sense signals are TP2 and TP3,
respectively.
2.2 Power-Up Procedure
2.2.1 Step 1: Driver Bias Supply
Power up the driver bias supply (5.5 V to 10 V) first. The D1 diode lights up after the driver bias supply comes
up. After this step, observe the PWM signals on test points TP9 and TP10. Verify that the PWM signal for the
high and low side are of the desired frequency (100 kHz to 5 MHz depending on the input voltage and load).
Also observe the default dead time between the high-to-low and low-to-high PWM transitions.
2.2.2 Step 2: Input Supply
Power up the input supply (10 V to 80 V). The D2 diode lights up after the input supply is powered up.
Observe the output voltage on the sense signals (TP2, TP3). Adjust the PWM duty cycle such that the output is
of the desired voltage. Load the output with an appropriate electronic load.
Note
The PWM duty cycle must be adjusted to compensate for the losses when the supply is loaded
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2.2.3 Step 3: Measure SW Voltage
To observe the SW node, connect a probe with a small pigtail to the via next to the SW pin, as shown in
Measuring the SW Node. This verifies that the measurement loop is small and, hence, accurately reflects the
behavior of the SW node. If a large loop is used, due to the high dv/dt on the SW node and the parasitic
impedance (inductance) of the loop, then a large amount of ringing is observed on the SW node measurements.
This ringing is not representative of the device performance, but is rather a measurement artifact. The probe
connection must be made prior to the board being powered up and one must verify that appropriate safety
precautions are taken.
Connect the scope probe to measure the SW node as shown in Figure 2-2. Notice the small pigtail used to
minimize the ground loop.
Figure 2-2. Measuring the SW Node
2.2.4 Setting Dead-Time
Dead times are set by the RC delays between the inverted and noninverted PWM input connected to jumper J3.
The dead time typically does not require to be changed, however to evaluate impact of dead time on efficiency,
the user can vary the RC delay. Changing the resistors R14 and R2 to get the appropriate dead time does not
take much time. Verify that the dead time is not reduced too much to causes a shoot-through condition.
2.3 Power-Down Procedure
To power down the board, the power-up procedures must be followed in reverse.
1. The load must be turned off first.
2. Next, turn off the input supply.
3. The PWM signal must be turned off next.
4. Finally, turn off the driver bias supply.
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2.4 Assembly Guidelines
Please follow the recommended assembly guidelines for the LMG2100 samples:
• Use low temperature solder paste (like Sn42-Bi58) whose melting temperature is around 130℃-140℃.
• Soldering using bottom side heating:
– Recommended for thinner board (less than or equal to four layers) with no components directly
underneath the device.
– Place the solder paste as per the stencil recommendation given in the data sheet.
– Board held on a pedestal at around 2-3 cm from the top of the hot air blower and device is aligned to keep
on the footprint.
• Soldering using top side heating:
– This method is recommended for thicker board (more than 4 layers).
– Use hot air gun (with temperature set to 400℃) and blow the air around the device avoiding directly above
the device (temperature can be higher but used for shorter duration).
• Look for proper soldering connection of signal pins. If there are excess solder, then please remove them
manually using solder iron.
• Avoid putting excess solder paste especially near the edge of PGND pad (pin number 6).
• If the assembly is done through automatic reflow oven, then set the temperature to less than 180℃.
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3 Implementation Results
3.1 Electrical Performance Specifications
The inductor used in this EVM is a 4.7-µH inductor which is rated for 25A. There are chances of heating up this
inductor if operated at higher switching frequency and higher current level. Please monitor the temperature of the
inductor and add external fan cooling if necessary. The switching frequency is set by an external PWM signal
(between 0 V and 5 V). The duty cycle of this PWM signal sets the duty cycle of the half-bridge module.
3.1.1 Evaluation Setup
This section describes the EVM hardware and outlines the procedure to set up for evaluation. Figure 3-1 and
Figure 3-2 show the top and bottom views of the LMG21EVM-078, respectively.
Figure 3-1. LMG2100EVM-078 Board (Top View)
Figure 3-2. LMG2100EVM-078 Board (Bottom View)
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The EVM can be mounted with a heat sink (S05MZZ37, 20 mm x 35 mm x 10 mm) to improve the thermal
performance. The two exposed thermal pads have a high-voltage potential difference between them, therefore
an electrically isolated thermal interface material (TIM) is used. TIM of GR80A-0H-50GY (thermal conductivity of
8 W/mK and thickness of 0.5 mm) has been placed between the device and the heat sink.
Figure 3-3. Evaluation Module with Heat Sink
WARNING
High voltages that can cause injury exist on this evaluation module (EVM). Please verify all safety
procedures are followed when working on this EVM. Never leave a powered EVM unattended.
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3.1.2 Performance Data and Results
Figure 3-4. SW Node Behavior Showing the Dead
Time and the Overshoot in the SW Node (Buck
Converter Loaded with 20A)
Figure 3-5. SW Voltage with 2 ohm External
Resistor
Figure 3-6. Zoom in of the SW Node Showing the Dead Time of 8 ns (Buck Converter Loaded With 15 A)
Note
Visit the E2E forum Gallium Nitride Solutions for more information regarding LMG2100 or LMG2100
hard-switched EVM.
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