SimCom SIM900E Manual de usuario

SIM900E Document

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User Manual

1. SIM900E Description

1.1. Summarize

SIM900E designed by SIMCom is a quad-band module which supports GSM/GPRS. The baseband circuit is

based on STE and RF circuit is based on RFMD. It works at quad bands------GSM 850MHz, EGSM 900MHz,

DCS 1800MHz and PCS 1900MHz. CPU clock is based on 26MHz crystal. The main IC includes PNX4851,

RF7176 and Flash, etc.

1.2. Feature

● Quad-band 900/1800/850/1900MHz

● GPRS multi-slot class 10/8

● GPRS mobile station class B

● Compliant to GSM phase 2/2+

–Class 4 (2W) at GSM 850 and EGSM 900

–Class 1 (1W) at DCS 1800 and PCS 1900

● Dimensions: 19.8*19.8*2.7mm

● Weight: 2.4 g

● Control via AT commands (GSM 07.07 ,07.05 and SIMCom enhanced AT Commands)

● Supply voltage range 3.2V ~ 4.8V

● Low power consumption

● Operation temperature: -30°C ~ +80°C

● 69 SMT pads include

–Interface to external SIM 3V/1.8V

–Analog audio interface

–RTC backup

–Serial interface

–LCD interface

–Antenna pad

–GPIO

–ADC

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1.3. Pin Name and IO Characters

Pin No. Pin Name I/O

1 GND 35 VDD_EXT O

2 SPK_P O 36 PWRKEY I

3 SPK_N O 37 ADC I

4 GND 38

GPIO12 IO

5 MIC_N I 39 SDA IO

6 MIC_P I 40 SCL IO

7 GND 41 DBG_RXD I

8 NETLIGHT O 42 DBG_TXD O

9 GND 43 VRTC IO

10 SIM_CLK O 44 SIM_PRESENCE I

11 SIM_DATA IO 45 GPIO8/KBC2 IO

12 SIM_RST I 46 GPIO1/KBR4 IO

13 SIM_VDD O 47 GPIO9/KBC1 IO

14 STATUS O 48 GPIO6/KBC4 IO

15 NRESET I 49 GPIO7/KBC3 IO

16 RXD I 50 GPIO5/KBR0 IO

17 TXD O 51 GPIO4/KBR1 IO

18 GND 52 GPIO2/KBR3 IO

19 RTS I 53 GPIO3/KBR2 IO

20 CTS O 54 GPIO10 IO

21 DTR I 55 PWM2 O

22 RI O 56 PWM1 O

23 DCD O 57 DISP _CLK O

24 GPIO11 IO 58 DISP _CS O

25 GND 59 DISP_DATA O

26 GND 60 DISP _D/C IO

27 GND 61 GND

28 RF_ANT IO 62 GND

29 GND 63 GND

30 VBAT I 64 GND

31 VBAT I 65 GND

32 VBAT I 66 GND

33 GND 67 GND

34 GND 68 GND

69 GND

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1.4. Pictures

Figure 1: Top view of SIM900E

Figure 2: Bottom view of SIM900E

SIM900E Document

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1.5. Dimension

Figure 3: Dimention

SIM900E Document

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2. Detail Block Diagram

Figure 4: Block diagram of SIM900E

3. Electrical and Reliability Characteristics

3.1. Absolute Maximum Ratings

The absolute maximum ratings stated in following table are stress ratings under non-operating conditions. Stresses

beyond any of these limits will cause permanent damage to SIM900E .

Table 1: Absolute maximum ratings

Symbol Parameter Min Typ Max Unit

VBAT Power supply voltage - - 5.5 V

*Input voltage -0.3 - 3.1 V

*Input current - - 10 mA

*Output current - - 10 mA

*These parameters are for digital interface pins, such as keypad, GPIO, I2C, UART, LCD and DEBUG.

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3.2. Digital Interface Characteristics

Table 2: Digital interface characteristics

Symbol Parameter Min Typ Max Unit

IIH High-level input current -10 - 10 uA

IIL Low-level input current -10 - 10 uA

VIH High-level input voltage 2.4 - - V

VIL Low-level input voltage - - 0.4 V

VOH High-level output voltage 2.7 - - V

VOL Low-level output voltage - - 0.1 V

* These parameters are for digital interface pins, such as keypad, GPIO, I2C, UART, LCDand DEBUG.

3.3. SIM Card Interface Characteristics

Table 3: SIM card interface characteristics

Symbol Parameter Min Typ Max Unit

IIH High-level input current -10 - 10 uA

IIL Low-level input current -10 - 10 uA

VIH High-level input voltage 1.4 - - V

2.4 - - V

VIL Low-level input voltage - - 0.4 V

2.4 V

VOH High-level output voltage 1.7 - - V

2.7 - - V

VOL Low-level output voltage - - 0.1 V

- - 0.1 V

3.4. SIM_VDD Characteristics

Table 4: SIM_VDD characteristics

Symbol Parameter Min Typ Max Unit

VOOutput voltage 2.75 2.9 3.00 V

1.65 1.80 1.95

IOOutput current - - 10 mA

SIM900E Document

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3.5. VRTC Characteristics

Table 5: VRTC characteristics

Symbol Parameter Min Typ Max Unit

VRTC-IN VRTC input voltage 2.00 3.00 3.15 V

IRTC-IN VRTC input current - 2 - uA

VRTC-OUT VRTC output voltage - 3.00 - V

IRTC-OUT VRTC output current - 10 - uA

3.6. Current Consumption (VBAT = 3.8V)

Table 6: Current consumption

Symbol Parameter Conditions Value Unit

IVRTC VRTC current VBAT disconnects. Backup battery is 3 V 2 uA

IVBAT VBAT current

Power down mode 30 uA

Sleep mode

BS-PA-MFRMS=9 1.0

mABS-PA-MFRMS=5 1.2

BS-PA-MFRMS=2 1.5

Idle mode

GSM 850

22 mA

EGSM 900

DCS 1800

PCS 1900

Voice call

GSM 850

EGSM 900

PCL=5 240

PCL=12 108

PCL=19 81

DCS 1800

PCS 1900

PCL=0 176

PCL=7 94

PCL=15 76

Data mode

GPRS(1Rx,1Tx)

GSM 850

EGSM 900

PCL=5 240

mAPCL=12 110

PCL=19 83

DCS 1800

PCS 1900

PCL=0 170

mAPCL=7 95

PCL=15 80

Data mode

GPRS(4Rx,1Tx)

GSM 850

EGSM 900

PCL=5 223

mAPCL=12 150

PCL=19 120

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DCS 1800

PCS 1900

PCL=0 166

mAPCL=7 130

PCL=15 115

Data mode

GPRS(3Rx,2Tx)

GSM 850

EGSM 900

PCL=5 410

mAPCL=12 185

PCL=19 130

DCS 1800

PCS 1900

PCL=0 300

mAPCL=7 155

PCL=15 122

IVBAT-peak Peak current During Tx burst 2 A

3.7. Electro-Static Discharge

SIM900E is an ESD sensitive component, so more attention should be paid to the procedure of handling and

packaging. The ESD test results are shown in the following table.

Table 7: The ESD characteristics (Temperature: 25℃, Humidity: 45 %)

Pin Contact discharge Air discharge

VBAT ±5KV ±10KV

GND ±4KV ±10KV

RXD, TXD ±3KV ±6KV

Antenna port ±5KV ±10KV

SPK_P/ SPK_N

MIC_P/ MIC_N ±2KV ±6KV

PWRKEY ±1KV ±6KV

3.8. Recommended Operating Conditions

Table 8: Recommended operating conditions

Symbol Parameter Min Typ Max Unit

VBAT Power supply voltage 3.6 4.0 4.2 V

TOPER Operating temperature -40 +25 +85 ℃

TSTG Storage temperature -45 +90 ℃

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4. Radio Characteristics

4.1. Module RF Output Power

The following table shows the module conducted output power, it is followed by the 3GPP TS 05.05 technical

specification requirement.

Table 9: SIM900E GSM850 and EGSM900 conducted RF output power

GSM850 and EGSM900

PCL Nominal output power (dBm) Tolerance (dB) for conditions

Normal Extreme

5 33 ±3 ±4

6 31 ±3 ±4

7 29 ±3 ±4

8 27 ±3 ±4

9 25 ±3 ±4

10 23 ±3 ±4

11 21 ±3 ±4

12 19 ±3 ±4

13 17 ±3 ±4

14 15 ±3 ±4

15 13 ±3 ±4

16 11 ±5 ±6

17 9 ±5 ±6

18 7 ±5 ±6

19-31 5 ±5 ±6

Table 10: SIM900E DCS1800 and PCS1900 conducted RF output power

DCS1800 and PCS1900

PCL Nominal output power (dBm) Tolerance (dB) for conditions

Normal Extreme

0 30 ±3 ±4

1 28 ±3 ±4

2 26 ±3 ±4

3 24 ±3 ±4

4 22 ±3 ±4

5 20 ±3 ±4

6 18 ±3 ±4

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7 16 ±3 ±4

8 14 ±3 ±4

9 12 ±4 ±5

10 10 ±4 ±5

11 8 ±4 ±5

12 6 ±4 ±5

13 4 ±4 ±5

14 2 ±5 ±6

15-28 0 ±5 ±6

For the module’s output power, the followings should be noted:

At GSM850 and EGSM900 band, the module is a class 4 device, so the module’s output power should not exceed

33dBm, and at the maximum power level, the output power tolerance should not exceed +/-2dB under normal

condition and +/-2.5dB under extreme condition.

At DCS1800 and PCS1900 band, the module is a class 1 device, so the module’s output power should not exceed

30dBm, and at the maximum power level, the output power tolerance should not exceed +/-2dB under normal

condition and +/-2.5dB under extreme condition.

4.2. Module RF Receive Sensitivity

The following table shows the module’s conducted receive sensitivity, it is tested under static condition.

Table 11: SIM900E conducted RF receive sensitivity

Frequency Receive sensitivity（Typical）Receive sensitivity(Max)

GSM850 -109dBm -107dBm

EGSM900 -109dBm -107dBm

DCS1800 -109dBm -107dBm

PCS1900 -109dBm -107dBm

4.3. Module Operating Frequencies

The following table shows the module’s operating frequency range; it is followed by the 3GPP TS 05.05 technical

specification requirement.

Table 12: SIM900E operating frequencies

Frequency Receive Transmit

GSM850 869 ~ 894MHz 824 ~ 849 MHz

EGSM900 925 ~ 960MHz 880 ~ 915MHz

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