Samsung SGH-E350E Manual de usuario

GSM TELEPHONE

SGH-E350E

GSM TELEPHONE CONTENTS

1. Specification

2. Circuit Description

3. Exploded Views and Parts List

4. Electrical Parts List

5. Block Diagrams

6. PCB Diagrams

7. Flow Chart of Troubleshooting

Samsung Electronics Co.,Ltd. August. 2005

Printed in Korea.

Code No.: GH68-07967A

BASIC.

This Service Manual is a property of Samsung Electronics Co.,Ltd.

Any unauthorized use of Manual can be punished under applicable

International and/or domestic law.

ⓒ

SAMSUNG Proprietary-Contents may change without notice

1. Specification

This Document can not be used without Samsung's authorization

1-1

PCS1900

1850~1910

1930~1990

512~810

80MHz

270.833kbps

3.692us

576.9us

4.615ms

0.3GMSK

30dBm~0dBm

0pcl ~ 15pcl

-100dBm

GSM900

Phase 1 EGSM 900

Phase 2 DCS1800

Phase 1

Freq. Band[MHz]

Uplink/Downlink 890~915

935~960 880~915

925~960 1710~1785

1805~1880

ARFCN range 1~124 0~124 &

975~1023 512~885

Tx/Rx spacing 45MHz 45MHz 95MHz

Mod. Bit rate

/BitPeriod 270.833kbps

3.692us 270.833kbps

3.692us

Time Slot Period

/ Frame Period 576.9us

4.615ms 576.9us

4.615ms

Modulation 0.3GMSK 0.3GMSK 0.3GMSK

MS Power 33dBm~5dBm 33dBm~5dBm 30dBm~0dBm

Power Class 5pcl ~ 19pcl 5pcl ~ 19pcl 0pcl ~ 15pcl

Sensitivity -102dBm -102dBm -100dBm

TDMA Mux 8 8 8

Cell Radius 35Km 35Km 2Km

1-1. GSM General Specification

SAMSUNG Proprietary-Contents may change without notice

This Document can not be used without Samsung's authorization

Specification

1-2

TX Power

control level PCS1900

0 30±3 dBm

1 28±3 dBm

2 26±3 dBm

3 24±3 dBm

4 22±3 dBm

5 20±3 dBm

6 18±3 dBm

7 16±3 dBm

8 14±3 dBm

9 12±4 dBm

10 10±4 dBm

11 8±4dBm

12 6±4 dBm

13 4±4 dBm

14 2±5 dBm

15 0±5 dBm

TX Power

control level DCS1800

0 30±3 dBm

1 28±3 dBm

2 26±3 dBm

3 24±3 dBm

4 22±3 dBm

5 20±3 dBm

6 18±3 dBm

7 16±3 dBm

8 14±3 dBm

9 12±4 dBm

10 10±4 dBm

11 8±4dBm

12 6±4 dBm

13 4±4 dBm

14 2±5 dBm

15 0±5 dBm

TX Power

control level GSM900

5 33±3 dBm

6 31±3 dBm

7 29±3 dBm

8 27±3 dBm

9 25±3 dBm

10 23±3 dBm

11 21±3 dBm

12 19±3 dBm

13 17±3 dBm

14 15±3 dBm

15 13±3 dBm

16 11±5 dBm

17 9±5 dBm

18 7±5 dBm

19 5±5 dBm

1-2. GSM TX power class

SAMSUNG Proprietary-Contents may change without notice

2. Circuit Description

This Document can not be used without Samsung's authorization

2-1

2-1. SGH-E350E RF Circuit Description

2-1-1. RX PART

- FRONT END MODULE(ANTENNA SWITCH MODULE + RX SAW FILTER) (U101)

→Switching Tx, Rx path for GSM900, DCS1800 and PCS1900 by logic controlling.

- FRONT END MODULE Control Logic (U101) →Truth Table

VC1 VC2 VC3

Tx Mode (GSM900) H L L

Tx Mode (DCS1800/1900) L H H(L)

Rx Mode (GSM900) L L L

Rx Mode (DCS1800) L L L

Rx Mode (PCS1900) L L H

- VC-TCXO (U101)

This module generates the 26MHz reference clock to drive the logic and RF.

It is turned on when the supply voltage +VCC_SYN is applied.

After buffering a reference clock of 26MHz is supplied to the other parts of the system

through the transceiver pin OUT.

- TRANSCEIVER (U102)

This chip is fully integrated GSM GPRS tri-band transceiver with VCO, loop filters and most of the

passive component in it.

And also fully integrated fractional N RF synthesizer with AFC control possibility, RF VCO with integrated supply

regulator. Semi integrated reference oscillator with integrated supply regulator.

RF Receiver front-end amplifies the E-GSM900, DCS1800 and PCS1900 aerial signal, convert the chosen channel

down to a low IF of 100kHz.

In IF section, further amplifies the wanted channel output level to the desired value and rejects DC.

2-1-2. TX PART

The transmitter is fully differential using a direct up conversion architecture. It consists of a signal side band

power up mixer. Gain is controlled by 6 dB via 3-wire serial bus programing. The fully integrated VCO and power

mixer achieve LO suppression, quadrature phase error, quadrature amplitude balance and low noise floor specification.

Output matching/balun components drive a standard 50 ohms single ended load.

SAMSUNG Proprietary-Contents may change without notice

This Document can not be used without Samsung's authorization

Circuit Description

2-2

2-2. Baseband Circuit description of SGH-E350E

2-2-1. PCF50603 (U400)

- Power Management

Eight low-dropout regulators designed specifically for GSM applications power the terminal and help ensure optimal

system performance and long battery life. A programmable boost converter provides support for 1.8V, 3.0V SIMs,

while a self-resetting, electronically fused switch supplies power to external accessories. Ancillary support functions,

such as RTC module and High Voltage Charge pump, Clock generator, aid in reducing both board area and system

complexity.

I2C BUS serial interface provides access to control and configuration registers. This interface gives a microprocessor

full control of the PCF50603 and enables system designers to maximize both standby and talk times.

Supervisory functions. including a reset generator, an input voltage monitor, and a temperature sensor, support reliable

system design. These functions work together to ensure proper system behavior during start-up or in the event of a

fault condition(low microprocessor voltage, insufficient battery energy, or excessive die temperature).

- Backlight Brightness Modulator

The Backlight Brightness Modulator (BBM) contains a programmable Pulse-width modulator (PWM) and FET to

modulate the intensity of a series of LED’s or to control a DC/DC converter that drives LCD backlight.

This phone (SGH-E350E) use PWM control to contrast the backlight brightness.

- Clock Generator

The Clock Generator (CG) generates all clocks for internal and external usage. The 32.768 kHz crystal oscillator

provides an accurate low clock frequency for the PCF50603 and other circuitry.

2-2-2. LCD Connector

LCD is consisted of main LCD(color 6.5K TFT LCD).

Chip select signals in the U305, LCD_CS, can enable LCD. BACKLIGHT signal enables white LED of main LCD. These

signal is from U400.

16-bit data lines(LD(0)~LD(15)) transfers data and commands to LCD. Data and commands use "RS" signal. If this signal

is high, Inputs to LCD are commands. If it is low, Inputs to LCD are data. The signal which informs the input or output

state to LCD, is required. But this system is not necessary this signal. So "L_WR" signal is used to write data or

commands to LCD. Power signals for LCD are "VDD_IO_HIGH".

SAMSUNG Proprietary-Contents may change without notice

Circuit Description

This Document can not be used without Samsung's authorization

2-3

2-2-3. Key

This is consisted of key interface pins KEY_ROW(0:4) and KEY_COL(0:4) in PCF5213EL1. These signals compose the

matrix. Result of matrix informs the key status to key interface in the PCF5213EL1. Power on/off key is seperated from

the matrix. So power on/off signal is connected with PCF50603 to enable PCF50603. Key LED is consisted of sixteen

blue LEDs.

key LED use the 3.3V LDO(U606) for a supply voltage. KEY_LED_ON signal enables eight white LED.

"FLIP" informs the status of slide (up or down) to the PCF5213EL1. This uses the hall effect IC, EM-1681-FT(U607).

A magnet under LCD enables EM-1681-FT.

2-2-4. EMI ESD Filter(F501,F502)

This system uses the EMI ESD filter, F501,F502 to protect noise from IF CONNECTOR part.

2-2-5. IF connetor(IFC500)

It is 18-pin connector. They are designed to use VBAT, V_EXT_CHARGE, USB_D+, +VBUS, USB_D-, TXD1, RXD1,

AUX_ON, EXT1, EXT2 and GND. They connected to power supply IC, microprocessor and signal processor IC.

2-2-6. Battery Charge Management IC(U503)

A complete constant-current/constant-voltage linear charger for single cell lithium-ion batteries is used.

If TA connected to phone, "V_EXT_CHARGE" enable charger IC and supply current to battery.

When fault condition caused, "CHG_ON" signal level change low to high and charger IC stop charging process.

2-2-7. Audio

HFR_P and HFR_N from PCF5213EL1 are connected to the main speaker via analog switches. MIC_P and MIC_N

are connected to the main MIC as well. EAR1 is the source of External Speaker. YMU762 is a synthesizer LSI for

mobile phones. This LSI has a built-in speaker amplifier for outputting sounds that are used by mobile phones in addition

to game sounds and ringing melodies that are replayed by a synthesizer.

The synthesizer section adopts “stereophonic hybrid synthesizer system”that are given advantages of both FM

synthesizers and Wave Table synthesizers to allow simultaneous generation of up to 32 FM voices and 32 Wave

Table voices.

It provides simultaneous generation of up to 40 tones by stereophonic hybrid synthesizer.

YMU762 has built a speaker amplifier of which maximum out is 580 mW at SPVDD=3.6V in this device.

There is Stereophonic analog output for Headphone.

2-2-8. Memory(U303)

This system uses Samsung's memory, KAP17SG00A. The KAP17SG00A is a Multi Chip Package Memory which

combines 256Mbit Synchronous Burst Multi Bank NOR Flash Memory and two 512Mbit OneNAND Flash and

128Mbit Synchronous Burst UtRAM.

It has 16 bit data line, HD[1~16] which is connected to PCF5213EL1 and MV3018SAQ, also has 24 bit address lines,

HA[1~24]. There are 3 chip select signals, CS0n_FLASH, CS4n_NAND, and CS1n_RAM.

In the Writing process, WEn is fallen to low and it enables writing process to operate. During reading process,

OEn is fallen to low and it enables reading process to operate. Each chip select signals in the PCF5213EL1 choose

different memories.

SAMSUNG Proprietary-Contents may change without notice

This Document can not be used without Samsung's authorization

Circuit Description

2-4

2-2-9. PCF5213EL1(U200)

The PCF5213EL1 is mainly composed of embeded DSP and ARM core. The DSP subsystem includes the Saturn

DSP core with embedded RAM and ROM, and a set of peripherals. It has 24kx16 bits PRAM, 104k*16 bits,

32k*16 XYRAM and 63k*16 XYROM in the DSP.

The ARM946E-S consists of an ARM9E-S processor core, 8 kbyte instruction cache and 8 kbyte data cache,

tghtly-coupled ITCM(Instruction Tightly Coupled Memory) and DTCM(Data Tightly Coupled Memory) memories, a

memory protection unit, and an AMBA(Advanced Microcontroller Bus Architecture) AHB(Advanced

High-performance Bus) bus interface with a write buffer.

HD(0:15), data lines and HA(0:23), address lines are connected to KAP17SG00A (memory), MV3018B (image dsp)

and YMU762 (melody IC). It has 64 kbyte SC RAM (0.5 Mbit) and 32 kbyte SC program ROM for bootstrap

loader in the ARM core.

HD(0:15), data lines and HA(0:23), address lines are connected to memory and YMU762 to communicate.

MV3018B(Camera DSP Chip) controls the communication between ARM core and DSP core.

OEn, WEn control the access of memory. KROW, and KCOL recognize the key string input status.

It has J-TAG control pins (TDI/TDO/TCK) for ARM and DSP core. J-SEL signal controls different access to ARM

and DSP core.

ADC(Analog to Digital Convertor) receives the condition of temperature, battery type and battery voltage.

2-2-10. TCO-5871U(26MHz)(U101)

This system uses the 26MHz TCXO, TCO-5871U, Toyocom. AFC control signal form PCF5213EL1 controls

frequency from 26MHz x-tal. It generates the clock frequency. This clock is connected to PCF5213EL1, YMU762 and

UAA3587EHN.

2-2-11. Camera DSP(MV3018SAQ)(U305)

MV3018SAQ provides rich video functions up to 30-frame display with minimized tasks in the handset main processor

as well as hardware based real-time JPEG compression and decompression. MV3018SAQ directly transmits and

previews the RGB data to the LCD graphic memory by processing the sensor output data according to the

handset's command. It can save the raw RGB data up to VGA resoultion into its image buffer and allows the

host processor to download with scalable sized compressed data.

It utilizes 16 bit data bus for communication with the main processor, including bus interface types.

SAMSUNG Proprietary-Contents may change without notice

3. Exploded View and Parts List

3-1

This Document can not be used without Samsung's authorization

3-1. Exploded View

QFU01

QKP02

QMP02

QFL01

QCR05

QSC01

QSP01

QMO01

QME02

QLC01

QVK01

QAN02

QRF01

QRF03

QVO01

QCW01

QFR01

QKP01

QMP01

QRE01

QCK01

QCA01

QIF01

QCR06

QBA01

QMI01

QCA02

QME01

QPC01

SAMSUNG Proprietary-Contents may change without notice

Exploded view and Part List

3-2

This Document can not be used without Samsung's authorization

3-2. Parts List

Location NO. Description SEC CODE

QAN02 ㅤINTENNA-SGHE350;EWPADF013A,SGH-E350, GH42-00592A

QBA01 ㅤBATTERY-800MAH,B SIL,ORA,M;BST4208SO GH43-01920C

QCA01 ㅤUNIT-CAMERA;SGH-E350,MOMBH150G1A,-,E GH59-02179A

QCA02 ㅤUNIT-CAMERA KEY;SGH-E350,SGH-E350 C/ GH59-02183A

QCR05 ㅤSCREW-MACHINE;PH,+,M1.4,L3,ZPC(BLK), 6001-001478

QCR06 ㅤSCREW-MACHINE;PH(PI2.5),+,M1.4,L3.5, 6001-001155

QCW01 ㅤMEC-CAMERA WINDOW;SGH-E350,EU,-,-,-, GH75-07339A

QFL01 ㅤMEC-SLIDE LOWER;SGH-E350,EU,-,-,-,-, GH75-07260A

QFR01 ㅤMEC-FRONT COVER;SGH-E350,EU,-,-,-,-, GH75-07261A

QFU01 ㅤMEC-SLIDE UPPER;SGH-E350,EU,-,-,-,-, GH75-07259A

QIF01 ㅤPMO-IF COVER;SGH-E350,PC(G6656)+URET GH72-20661A

QKP01 ㅤMEC-KEYPAD MAIN;SGH-E350,EU,-,-,-,-, GH75-07285A

QKP02 ㅤMEC-KEYPAD SUB;SGH-E350,EU,-,-,-,-,B GH75-07284A

QLC01 ㅤLCD-SGHE350;LTS166QQ-F02,SGH-E350,12 GH07-00729A

QME01 ㅤUNIT-METAL DOME(MAIN);SGH-E350,SGH-E GH59-02182A

QME02 ㅤUNIT-METAL DOME(SUB);SGH-E350,SGH-E3 GH59-02181A

QMI01 ㅤMICROPHONE-ASSY-SGHE350;1,130to500uA GH30-00203A

QMO01 ㅤMOTOR DC-SGHE350;JHV-10A1-F13,SGH-E3 GH31-00176A

QMP01 ㅤPBA MAIN-SGHE350EDGE;SCH-E350,TINY,E GH92-02179A

QMP02 ㅤPBA SUB-SGHE350;SGH-E350,TINY,EU,PBA GH92-02206A

QPC01 ㅤPCB-FPCB CABLE;SGH-E350,POLYIMIDE,3L GH41-00882A

QRE01 ㅤMEC-REAR COVER(FTM);SGH-E350E,FTM,-, GH75-07332A

ㅤQVO01 PMO-VOLUME KEY;SGH-E350,ABS+URETHAN, GH72-20665A

ㅤQCK01 PMO-CAMERA KEY;SGH-E350,ABS+URETHAN, GH72-20666A

QRF01 ㅤMPR-SHEET RF COVER;SGH-E350,PC SHEET GH74-16395A

QRF03 ㅤPMO-EAR COVER V2;SGH-E350,PC(G71770C GH72-22634A

QSC01 ㅤMPR-SLIDE/L SCREW SHEET;SGH-E350,PC GH74-16356A

QSP01 ㅤSPEAKER;0.7W,8ohmohm,122dB±2dB,850H 3001-001782

QVK01 ㅤUNIT-VOLUME KEY;SGH-E350,SGH-E350 V/ GH59-02180A

Otros manuales para SGH-E350E

Tabla de contenidos

Otros manuales de Teléfono móvil de Samsung

Samsung

Samsung SGH-2400 Manual de usuario

Samsung

Samsung GT-E2652W Manual de usuario

Samsung

Samsung GT-C5010E Manual de usuario

Samsung

Samsung SCH-I510 Manual de usuario

Samsung

Samsung CF75 Manual de usuario

Samsung

Samsung Champ Guía de instalación

Samsung

Samsung SCH-850 Series Manual de usuario

Samsung

Samsung SM-E700M/DS Manual de usuario

Samsung

Samsung Qwest SPH-a680 Manual de usuario

Samsung

Samsung SM-A310M Manual de usuario

Samsung

Samsung SCH-U209 Manual de usuario

Samsung

Samsung SGH-X140 Manual de usuario

Samsung

Samsung Serenata SGH-F310 Manual de usuario

Samsung

Samsung Gem SCH-i100 Manual de usuario

Samsung

Samsung SGH-2488 Manual de usuario

Samsung

Samsung SPRINT SPH-i500 Manual de usuario

Samsung

Samsung Galaxy J3 Manual de usuario

Samsung

Samsung DENIM SGH-A207ZKAATT Manual de usuario

Samsung

Samsung SGH-A736 Manual de usuario

Samsung

Samsung GALAXY SIII Manual de usuario

Samsung

Samsung C5212 Manual de usuario

Samsung

Samsung GT-B5510 Manual de usuario

Samsung

Samsung GT-S5500 Manual de usuario

Samsung

Samsung GT-E2652W Manual de usuario

Manuales populares de Teléfono móvil de otras marcas

Zte

Zte BLADE A520 Manual de usuario

Nokia

Nokia Lumia 620 Manual de usuario

Blackbe;rry

Blackbe;rry KEYone Manual de usuario

Bea-fon

Bea-fon X5 Premium Manual de usuario

Blackbe;rry

Blackbe;rry 8707 Series Manual de usuario

Blackbe;rry

Blackbe;rry Storm Instrucciones de funcionamiento

LG LM-X420QN Manual de usuario

LifeWatch

LifeWatch V Manual de usuario

Bea-fon

Bea-fon SILVER LINE SL860 Manual de usuario

IKI Mobile

IKI Mobile KF4.5i Manual de usuario

Hitech

Hitech HT-850 Manual de usuario

Yezz

Yezz Fashion F10 Manual de usuario

Point Mobile

Point Mobile PM60 Manual de usuario

Blackbe;rry

Blackbe;rry Q10 Manual de usuario

Blackbe;rry

Blackbe;rry Bold 9900 Manual de usuario

Blackbe;rry

Blackbe;rry STORM 9500 - VERSION 5.0 Manual de usuario

LG LM-K420EMW Manual de usuario

ISAFE MOBILE

ISAFE MOBILE IS655.2 Manual de usuario